III-V on Silicon Semiconductor Structure Without Bonding Steps
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Solution Overview
Problem
Existing semiconductor structures integrating III-V material systems and Si material systems require costly bonding operations, leading to step differences and increased area costs due to wasted device regions and complex metallization challenges.
Innovation Solution
A semiconductor structure design where the first and second devices, made of different material systems, are integrated without bonding, with coplanar surfaces and an isolation region to prevent carrier interference, allowing for compact and cost-effective manufacturing by eliminating the need for bonding operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If bonding operations are used to integrate III-V material system and Si material system devices, then device integration is achieved, but manufacturing cost increases and step differences are created
Solution Approach 1:
The patent merges the III-V material system device and Si material system device into a single integrated structure where the first device is formed over the second device with their active regions vertically aligned. This integration eliminates the need for separate bonding operations while achieving functional integration of both material systems in one continuous manufacturing process.
Solution Approach 2:
The patent transitions from a lateral integration approach (which would require bonding and create step differences) to a vertical integration approach. By stacking the first device over the second device with vertically aligned active regions, the structure achieves integration in the vertical dimension, eliminating bonding operations and creating a planar top surface for simplified metallization.
2Adaptability or versatility
If bonding operations are used to integrate different material systems, then device integration is achieved, but step differences and area waste occur
Solution Approach 1:
The patent combines both devices within a single integrated structure where the first device is formed over the second device. This merging eliminates the need for separate device regions that would be wasted in bonded structures, achieving full utilization of the semiconductor substrate area.
Solution Approach 2:
By moving from lateral placement to vertical stacking, the patent achieves integration without requiring additional lateral area. The vertical alignment of active regions allows both devices to share the same footprint, eliminating area waste associated with bonding approaches.
3Adaptability or versatility
If bonding operations are used to integrate III-V and Si devices, then device integration is achieved, but metallization complexity increases
Solution Approach 1:
The vertical integration approach creates a planar top surface at the same elevation, allowing metallization to be applied uniformly across the entire structure. This eliminates the complex three-dimensional metallization pathways required in bonded structures where different metal layers would need to navigate step differences between bonded interfaces.
4Adaptability or versatility
If bonding operations are used for material system integration, then device integration is achieved, but manufacturing process complexity increases
Solution Approach 1:
The patent combines the formation of both devices into a single continuous manufacturing process without intermediate bonding steps. The first device is formed over the second device in sequence, eliminating multiple separate process modules (bonding, alignment, annealing) and simplifying the overall manufacturing flow.
Data Source
AI summary
A semiconductor structure and method for manufacturing thereof are provided. The semiconductor structure includes a silicon substrate having a first surface, a III-V layer on the first surface of the silicon substrate and over a first active region, and an isolation region in a portion of the III-V layer extended beyond the first active region. The first active region is in proximal to the first surface. The method includes the following operations. A silicon substrate having a first device region and a second device region is provided, a first active region is defined in the first device region, a III-V layer is formed on the silicon substrate, an isolation region is defined across a material interface in the III-V layer by an implantation operation, and an interconnect penetrating through the isolation region is formed.