III-V on Silicon Semiconductor Structure With Coplanar Device Integration
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Solution Overview
Problem
Existing semiconductor structures integrating III-V material system and Si material system require bonding operations, leading to high area costs and wasted device regions due to step differences between integrated devices.
Innovation Solution
The integration of first and second devices with coplanar surfaces is achieved by eliminating the need for bonding operations through the use of isolation regions and coplanar surfaces, utilizing a first device with a first material system and a second device with a second material system, where the second material system has a higher bandgap, allowing for efficient carrier repulsion and reduced area consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If bonding operations are used to integrate III-V material system and Si material system, then device integration is achieved, but area cost increases and step differences cause wasted device regions
Solution Approach 1:
The patent divides the integrated device into distinct first and second devices with separate active regions defined in different material systems (III-V and Si). Each device is segmented into its own device region with isolated active regions, allowing independent optimization and eliminating the need for bonding operations while reducing area cost.
Solution Approach 2:
The patent applies different material systems (III-V for first device, Si for second device) to different local regions of the substrate. Each material system is used where it provides optimal performance for the specific device function, achieving high adaptability without requiring bonding operations that would increase area cost.
2Adaptability or versatility
If bonding operations are used to integrate different material systems, then device integration is achieved, but manufacturing complexity increases
Solution Approach 1:
The patent segments the integration process by defining separate active regions for first and second devices in different material systems directly on the substrate. This segmentation eliminates the need for complex bonding operations, reducing manufacturing complexity while maintaining device integration capability.
Solution Approach 2:
The patent performs preliminary actions by pre-defining active regions in different material systems on the substrate before final device fabrication. This preliminary segmentation of device regions simplifies subsequent manufacturing steps and eliminates the need for complex bonding operations.
3Adaptability or versatility
If bonding operations are used to integrate III-V and Si material systems, then device integration is achieved, but manufacturing cost increases
Solution Approach 1:
The patent segments the integrated structure into first and second devices with separate active regions in different material systems. This segmentation eliminates the need for expensive bonding operations, reducing manufacturing cost while achieving device integration.
Solution Approach 2:
The patent uses different material systems (III-V and Si) in different local device regions where each material provides optimal performance. This local optimization achieves high device integration without requiring costly bonding operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a more compact, cost-effective semiconductor structure with simplified manufacturing, as it eliminates the need for bonding operations and reduces area consumption by integrating devices without step differences, thereby lowering overall manufacturing costs.
Implementation Method 1
isolation region defined in a portion of the layer over the first device region
Data Source
AI summary
A semiconductor structure and method for manufacturing thereof are provided. The semiconductor structure includes a silicon substrate having a first surface, a III-V layer on the first surface of the silicon substrate and over a first active region, and an isolation region in a portion of the III-V layer extended beyond the first active region. The first active region is in proximal to the first surface. The method includes the following operations. A silicon substrate having a first device region and a second device region is provided, a first active region is defined in the first device region, a III-V layer is formed on the silicon substrate, an isolation region is defined across a material interface in the III-V layer by an implantation operation, and an interconnect penetrating through the isolation region is formed.