Image Intensifier Gain Layer Ribs for Low-Noise Electron Alignment

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Solution Overview

Problem

Image intensifiers that rely on electron impact ionization for amplification face performance degradation due to electron backscattering, absorption, and lateral movement, leading to halo effects and signal loss, which complicates the tradeoff between gain layer thickness and mechanical robustness.

Innovation Solution

A Micro-Electro-Mechanical-Systems (MEMS) image intensifier design featuring a gain substrate layer with support ribs on both input and emission surfaces, providing mechanical support while minimizing signal degradation and loss, by optimizing rib height and spacing to maintain electron path alignment and prevent crosstalk.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If the gain layer thickness is minimized to reduce electron backscattering and improve image quality, then signal integrity is improved, but mechanical robustness deteriorates making the layer susceptible to breakage and deflection

Engineering Contradiction:
Improveimage qualityVSAvoidmechanical robustness
Core Design Contradiction:
Measurement precisionVSStrength

Solution Approach 1:

The gain layer is segmented into multiple thin gain layers stacked together, each supported by its own support structure. This segmentation allows each individual layer to remain thin for optimal electron transmission while the collective structure provides enhanced mechanical robustness through distributed support points and load sharing across multiple layers.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Support structures are strategically positioned at specific locations within the gain layer assembly rather than uniformly distributed. The support structures are placed at corners and edges where mechanical stress is highest, providing localized reinforcement exactly where needed while maintaining large open areas for electron transmission.

Inventive Principle:
Principle #3Local quality

2Strength

If support structures are added to the gain layer to improve mechanical robustness, then strength is improved, but signal degradation and manufacturing complexity increase

Engineering Contradiction:
Improvemechanical robustnessVSAvoidmanufacturing complexity
Core Design Contradiction:
StrengthVSDevice complexity

Solution Approach 1:

The support structures utilize thin film techniques compatible with standard semiconductor manufacturing processes. The support structures are formed as thin membranes or films that can be deposited and patterned using existing CMOS-compatible processes, avoiding the need for complex three-dimensional structuring or specialized manufacturing equipment.

Inventive Principle:
Principle #30Flexible shells and thin films

Solution Approach 2:

The support structures are designed with optimized dimensional parameters including thickness, area, and positioning that balance mechanical support with minimal electron scattering. By carefully controlling the size and distribution parameters of the support structures, the design achieves adequate mechanical strength while maintaining high electron transmission efficiency.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design enhances the mechanical robustness and signal integrity of the thin gain substrate layer, reducing signal loss and maintaining spatial registration of carriers, thereby improving image quality and reliability without degrading performance.

Implementation Method 1

the photocathode layer converts incoming photons into electrons

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 2

the electron multiplier (gain layer) utilizes electron impact ionization as a gain mechanism to amplify electrons generated by the photocathode layer

Methodology Applied
Scientific EffectElectron impact ionization: Ionisation

Data Source

PatentEP3987561B1Image intensifier with thin layer transmission layer support structures
Publication Date: 2024.10.23 ELBIT SYSTEMS OF AMERICA LLC
  • EP3987561B1 patent drawingFigure 1
  • EP3987561B1 patent drawingFigure 2
  • EP3987561B1 patent drawingFigure 3

AI summary

A light intensifier includes a semiconductor structure to multiply electrons and block stray particles. A thin gain substrate layer includes an electron multiplier region that is doped to generate a plurality of electrons for each electron that impinges on an input surface of the gain substrate layer and blocking structures that are doped to direct the plurality of electrons towards emission areas of an emission surface of the gain substrate layer. Respective ribs of a first plurality of ribs on the input surface of the gain substrate layer are vertically aligned with respective blocking structures, and respective blocking structures are vertically aligned with respective ribs of a second plurality of ribs at the emission surface. This alignment directs electrons along a path through the gain substrate layer to reduce noise. The support ribs provide mechanical strength to the gain substrate layer, improving robustness of the light intensifier while minimizing noise.