Image Sensor with Bonded Substrates for High Resolution
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As semiconductor device scaling-down continues, existing manufacturing processes have been inadequate in ensuring satisfactory performance, particularly in forming image sensors with high resolution and efficient radiation detection across various wavelengths without compromising device size and complexity.
Innovation Solution
The solution involves forming first and second radiation sensing regions on separate substrates, with corresponding interconnect structures that allow incident radiation to pass through without obstruction, enabling the detection of near-infrared and visible radiation respectively, and bonding these structures to achieve improved resolution and quantum efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If radiation sensing regions for different wavelengths are formed in the same substrate, then device integration is achieved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent divides the radiation sensing system into separate substrates, with each substrate dedicated to sensing specific wavelength ranges. This segmentation allows independent optimization of each sensing region without compromising the other, thereby reducing manufacturing complexity while maintaining device integration functionality.
Solution Approach 2:
The patent transitions from a single-substrate two-dimensional integration to a multi-substrate three-dimensional stacked architecture. By bonding multiple substrates together, the system achieves vertical integration that maintains compact form factor while simplifying the manufacturing process for each individual substrate.
2Volume of moving object
If device scaling-down continues, then device size is reduced, but manufacturing process adequacy deteriorates
Solution Approach 1:
By segmenting the device into multiple substrates, each can be manufactured independently at optimized sizes and specifications. This approach allows precise control over each substrate's dimensions and characteristics, maintaining manufacturing precision even as overall device size is reduced through compact stacking.
Solution Approach 2:
The patent enables independent adjustment of substrate thickness, material composition, and sensing region dimensions for each substrate. This parameter optimization allows each component to be tailored for its specific function, ensuring manufacturing adequacy while achieving compact overall device dimensions.
3Measurement precision
If separate substrates are used for different radiation sensing regions, then resolution and quantum efficiency are improved, but device complexity increases
Solution Approach 1:
The patent resolves the complexity issue by transitioning to a vertical stacked architecture. Multiple substrates are bonded together in the third dimension, creating a compact three-dimensional structure that achieves high resolution and quantum efficiency without increasing the device's horizontal footprint or overall structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the resolution and quantum efficiency of image sensors by allowing separate optimization of sensing region sizes and thicknesses, reducing manufacturing complexity and cost, while maintaining a compact design.
Implementation Method 1
a first radiation sensing region (106) formed in a first substrate (102)... a second radiation sensing region (206) formed in a second substrate (202)... configured to sense radiation of different wavelengths
Data Source
AI summary
An image sensor structure and a method for forming the same are provided. The image sensor structure includes a first substrate including a first radiation sensing region and a first interconnect structure formed over a front side of the first substrate. The image sensor structure further includes a second substrate including a second radiation sensing region and a second interconnect structure formed over a front side of the second substrate. In addition, the first interconnect structure is bonded with the second interconnect structure.