Solid-State Devices TRIZ Cases

Segmented metal wire microstructures on substrates boost dielectric constants, overcoming natural material limits.

Energy rays selectively remove a metallic material layer to form precise auxiliary wiring, lowering sheet resistance without compromising light transmittance.

An unpatterned mask cures the lyophilic layer using the pixel defining structure as a template, eliminating complex mask management.

A tungsten nitride layer between germanium antimony tellurium and carbon shields the phase change memory structure.

A ferroelectric memory device uses a dopant concentration gradient to generate lattice strain.

A thin film buffer layer improves organic-inorganic interface characteristics in display packaging.

Curved conductive lines connect light-emitting chips in a stretchable array.

OLED display panel eliminates common hole blocking layer to reduce operating voltage and improve current efficiency.

A metal nitride film prevents fluorine diffusion from metal layers into insulating portions, maintaining structural integrity.

Segmented auxiliary electrode structures with protrusion-surrounded openings ensure uniform brightness across large-area displays.

Thinner quantum barriers near the p-type layer boost carrier mobility and recombination probability, resolving crystallinity defects from high indium content.

A thin film transistor array substrate for digital X-ray detectors incorporates an electrostatic induction line with higher resistance than the readout circuit pad connection line.

Integrating self-rectifying properties into the active layer eliminates interference currents between adjacent cells, boosting integration density.

Opposing piezoresistance coefficients in series-connected N-type and P-type diffusion layers stabilize resistance values against packaging stress variations.

Level shifter circuits shift page buffer control signals to higher driving voltages, resolving insufficient programming voltage levels.

An intermediary peeling layer absorbs laser energy to enable substrate removal without generating carbide deposits that compromise yield.

A light emitting device uses temporary substrate removal and grinding to achieve reduced thickness.

Deforming a pliable dielectric layer eliminates gaps between the transfer head and devices, preventing damage and increasing successful transfer rates.

Inverting a concave meniscus to a convex shape improves light flux and color uniformity while maintaining mechanical protection of the encapsulant.

Integrating a ferroelectric capacitor with the transistor gate eliminates the harmful interface and improves endurance.

A semiconductor device structure uses a deep fourth well to suppress latch-up in parasitic bipolar transistors.

Elastic sealing structures surround electrical contact areas to prevent mold material contamination, ensuring uniform surfaces despite height tolerances.

A polysilicon light-shielding structure prevents light leakage in crossover and contact hole regions of an LCD panel.

A light-emitting array uses distinct wavelength conversion layers to generate separate emission beams for white light production.

A hole blocking layer confines charge carriers in an organic light-emitting diode structure.

Vertical channel contours increase effective gate area to reduce flicker noise sensitivity without decreasing the planar fill factor.

A nitrogen-added amorphous silicon layer paired with a silicon nitride film enhances charge capture density in semiconductor devices.

A thin film transistor array substrate connects its light-shielding layer directly to the gate line to apply a control voltage.

Segmented common electrodes coupled via a distinct plane region isolate adjacent pixels, resolving light leakage between them.

A light emitting device uses a reflective resin member to surround the element and embed conductive wiring.

Bonding separate substrates reduces manufacturing complexity while enhancing resolution and quantum efficiency across wavelengths.

Novel polycyclic aromatic compound uses boron atoms to link aromatic rings, increasing the HOMO-LUMO gap and triplet excitation energy.

Segmented active regions replace mechanical mirrors to control beam profiles, reducing device complexity and manufacturing costs.

Wet cleansing prevents etchant damage to reflection and transparent conductive layers, enabling flexible material selection.

Carbonizing an organic layer via laser irradiation creates a spacer that prevents metal trace damage during bending.

Overlapping filter edges block oblique light between adjacent photodiodes, resolving the trade-off between layout compactness and cross-talk noise.

Segmenting the emissive layer into three distinct zones with compensating colors resolves color stability deterioration under varying current densities.

Sacrificial layers define horizontal channels for low-resistivity body contacts, avoiding selective epitaxial growth costs and thermal budget constraints.

Stacked conductive layers with trench recesses isolate floating gates, reducing programming current for neuromorphic computing.

A display device light blocking pattern layer includes openings over pixel defining film protrusions to align with sensing electrode intersections.

Metal coating on mask assembly surfaces prevents thermal movement and plasma reactions, reducing particle contamination during OLED encapsulation.

Vertical stacking separates operational surfaces from electrical contacts, resolving the conflict between assembly simplicity and high packaging density.

Oxidizing exposed aluminum gate electrodes forms dielectric barriers that prevent electrical shorting between source and drain contacts.

Integrates pixel electrode, active layer, and drain into one metal oxide structure to reduce patterning steps and alignment errors.

A pixel arrangement method shares color sub pixels across adjacent units to increase spacing and resolution.

Ultraviolet irradiation lowers adhesive force in marginal zones, allowing cutting blades to scatter waste material and maintain productivity.

A power transistor uses a dielectric platform for edge termination to manage equipotential lines in high-frequency applications.

A shared selection circuit unit handles write and read operations for resistive memory cells using cell designating information.

Pre-bond annealing stabilizes metal microstructures before ultra-low temperature direct joining of semiconductor features.