Image Sensor Pillar Array Structure for Flare and Reflection Reduction

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Solution Overview

Problem

Image sensors experience reduced light absorption and generate petal flares due to reflection and diffraction at the interface between microlens and semiconductor substrates with different refractive indexes.

Innovation Solution

Incorporating a pillar array layer with varying pillar heights, pitches, and shapes between photodiodes to minimize reflection and diffraction, using tapered structures with gradually changing refractive indexes to extend light paths and enhance absorption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If a microlens layer and semiconductor substrate with different refractive indexes are used, then light focusing capability is improved, but reflection and petal flares occur reducing light absorption

Engineering Contradiction:
Improvelight absorptionVSAvoidreflection and diffraction
Core Design Contradiction:
Illumination intensityVSObject-generated harmful factors

Solution Approach 1:

A pillar array layer is introduced as an intermediary structure between the microlens layer and semiconductor substrate. This pillar array layer has a refractive index that gradually transitions from the microlens layer to the semiconductor substrate, reducing the abrupt refractive index difference and thereby minimizing reflection and diffraction effects while maintaining light focusing capability

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The refractive index parameter is gradually changed through the pillar array layer structure. By varying the pillar height, pitch, and shape, the effective refractive index transitions smoothly from the microlens layer to the semiconductor substrate, reducing reflection and improving light absorption

Inventive Principle:
Principle #35Parameter changes

2Loss of energy

If light passes through microlens layer and semiconductor substrate, then light absorption by photodiodes occurs, but reflection reduces absorbed light

Engineering Contradiction:
Improvelight absorption efficiencyVSAvoidreflection
Core Design Contradiction:
Loss of energyVSObject-generated harmful factors

Solution Approach 1:

The pillar array layer serves as an intermediary that reduces reflection losses by providing a gradual refractive index transition, thereby increasing the amount of light that reaches and is absorbed by the photodiodes

Inventive Principle:
Principle #24Intermediary (Mediator)

3Reliability

If light passes through microlens layer and semiconductor substrate, then image sensing occurs, but diffraction generates petal flares reducing performance

Engineering Contradiction:
Improveimage sensor performanceVSAvoidpetal flares from diffraction
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The pillar array layer acts as an intermediary that reduces diffraction effects by providing a gradual refractive index transition, thereby minimizing petal flare generation and improving image sensor performance

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution reduces petal flares by up to 32% and maintains quantum efficiency at 20%, thereby improving image sensor performance.

Implementation Method 1

The light may generate reflection when the light passes through the microlens layer and the semiconductor substrate

Methodology Applied
Scientific EffectReflection: Reflection

Implementation Method 2

due to the diffraction of the light, the image sensor may generate petal flares

Methodology Applied
Scientific EffectDiffraction: Diffraction

Implementation Method 3

The microlens layer and the semiconductor substrate have different refractive indexes

Methodology Applied
Scientific EffectRefraction: Refraction

Data Source

PatentUS12593521B2Image sensor and method of manufacturing the same
Publication Date: 2026.03.31 VISERA TECH CO LTD
  • US12593521B2 patent drawing
  • US12593521B2 patent drawing
  • US12593521B2 patent drawing

AI summary

The image sensor includes a semiconductor substrate, a pillar array layer, a planar layer, and a microlens layer. The semiconductor substrate includes a first photodiode and a second photodiode. The pillar array layer is disposed on the semiconductor substrate, the pillar array layer includes a first pillar array disposed above the first photodiode and a second pillar array disposed above the second photodiode. The first pillar array includes a plurality of first pillar structures, the second pillar array includes a plurality of second pillar structures, all the first pillar structures have a first height, and all the second pillar structures have a second height. The planar layer is disposed on the pillar array layer. The microlens layer is disposed on the planar layer.