Radiation Controlled Devices TRIZ Cases

Parallel vertical gates improve charge transfer in miniaturized image sensor pixels, preserving light detection with deep potential regions.

A hybrid color filter redirects incident light between PDAF photodiodes, improving phase detection while avoiding the light loss of half-shielded pixels.

Air gaps within a metal-dielectric pixel grid cut optical crosstalk while preserving photon throughput, boosting quantum efficiency and SNR.

A graded pillar array between the microlens and photodiodes cuts reflection and petal flares while preserving quantum efficiency.

A substrate light-scattering structure converges incident light to each pixel, boosting near-IR sensitivity while limiting adjacent-pixel cross-talk.

A back support plate stabilizes thinned backside-illuminated photodetector substrates, reducing absorption losses and improving DQE.

By confining the upper conductive film to the separation space, this case avoids spin-coating striation and corner damage in backside-illuminated image sensors.

A stacked visible and infrared pixel layout uses an IR transmission filter to improve infrared reception despite dense visible-pixel wiring.

A vertical light blocker around the stacked conversion layer suppresses interlayer light leakage and color mixing in photodetectors.

A single-mask etch forms laterally offset capacitor electrodes with less misregistration, boosting energy density and saving device area.

Frontside dielectric isolation separates tightly packed CMOS pixels through the substrate, preserving light area while reducing crosstalk and defects.

A doped well beside vertical conductive structures adds series capacitance to cut RC delay, improving CMOS image sensor speed and power use.

Multiple VTG walls extend deeper around the photodetector to improve electron capture and reduce CIS lag in CMOS image sensors.

A perovskite nanowire photodiode placed above the circuit layer cuts substrate carrier diffusion, reducing crosstalk and parasitic light sensitivity.

A dual-implant pixel uses a highly doped core and diffuse halo to shrink depletion regions, cutting dark current while preserving quantum efficiency and MTF.

A low-index waveguide and tapered metal layer reflect oblique light between pixels, reducing color mixing without sacrificing sensitivity.

Switching exposure and non-exposure bias while limiting capacitance change cuts charge variation, noise, and brightness mismatch in global shutter imaging.

Bias switching and constrained photoelectric converter capacitance suppress charge buildup noise and improve S/N under changing light.

A split isolation region with insulation and impurity implantation stabilizes potential barriers, preserving signal linearity and phase detection range.