Single-Mask Capacitor Structure for Minimal Electrode Offset

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing capacitor manufacturing processes require multiple masks, leading to misregistration tolerances that increase the lateral edge offset between electrodes, reducing energy storage density and increasing capacitor area.

Innovation Solution

A single-mask etching process is used to form capacitors with laterally offset electrodes, minimizing the lateral edge offset and enhancing energy storage density while reducing manufacturing costs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If multiple masks are used in capacitor manufacturing, then manufacturing flexibility is improved, but lateral edge offset between electrodes increases and manufacturing precision deteriorates

Engineering Contradiction:
Improvemanufacturing flexibilityVSAvoidlateral edge offset
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The patent combines multiple mask functions into a single mask structure that defines both the first electrode pattern and the second electrode pattern simultaneously. This single mask approach eliminates misregistration errors between multiple masks while maintaining the ability to create laterally offset electrodes through the mask's geometric design, thus resolving the contradiction between manufacturing flexibility and precision.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The invention transitions from a two-mask sequential process (x-dimension alignment) to a single-mask process where lateral offset is achieved through the mask's own geometric dimensions and pattern design. This dimensional approach allows precise control of electrode offset without relying on multiple mask registrations, improving manufacturing precision while maintaining flexibility.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Manufacturing precision

If lateral edge offset between electrodes is increased, then manufacturing tolerance is improved, but energy storage density deteriorates

Engineering Contradiction:
Improvemanufacturing toleranceVSAvoidenergy storage density
Core Design Contradiction:
Manufacturing precisionVSQuantity of substance

Solution Approach 1:

The patent changes the critical parameter from lateral edge offset distance to angular orientation of electrode edges. By controlling the angle at which electrode edges meet rather than their lateral separation, the design achieves both manufacturing tolerance (through angular precision) and maximized energy storage density (by minimizing wasted space). This parameter transformation resolves the contradiction between tolerance and density.

Inventive Principle:
Principle #35Parameter changes

3Quantity of substance

If capacitor area is increased, then energy storage capacity is improved, but device area efficiency deteriorates

Engineering Contradiction:
Improveenergy storage capacityVSAvoiddevice area efficiency
Core Design Contradiction:
Quantity of substanceVSArea of stationary object

Solution Approach 1:

The patent employs curved or angled electrode edges instead of straight perpendicular boundaries, creating a more efficient use of space. The curved geometry allows the capacitor to achieve maximum energy storage capacity within a minimized footprint by optimizing the electrode overlap area, thus improving device area efficiency while maintaining high energy storage capacity.

Inventive Principle:
Principle #14Spheroidality (Curvature)

Data Source

PatentUS20260059876A1Capacitor Structures
Publication Date: 2026.02.26 SEMICON COMPONENTS IND LLC
  • US20260059876A1 patent drawing
  • US20260059876A1 patent drawing
  • US20260059876A1 patent drawing

AI summary

A system may include a capacitor. The capacitor may include a first electrode, a second electrode, and an insulator between the first and second electrodes. The first electrode may have a peripheral edge that is laterally offset from a peripheral edge of the second electrode. The laterally offset peripheral edges of the first and second electrodes may be formed using a single-mask-based etch process.