Image Sensor Pixel Isolation via Insulating Spacers
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Solution Overview
Problem
Existing image sensing devices face challenges in achieving compact size and high resolution while minimizing interference between photoelectric devices in adjacent pixels.
Innovation Solution
The image sensing device incorporates a separation structure with a conductive pattern and insulating spacer within the semiconductor substrate, along with electrode structures formed simultaneously, to reduce interference and enhance performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If photoelectric devices are placed closer to achieve high resolution, then resolution is improved, but interference between adjacent pixels increases
Solution Approach 1:
The patent divides the semiconductor substrate into isolated pixel regions using separation structures. These structures include insulating spacers that physically segment adjacent pixels, preventing electrical interference while allowing close spacing for high resolution. The conductive patterns are also segmented into discrete regions within each pixel, isolated by the separation structures.
Solution Approach 2:
The patent introduces insulating spacers as intermediary elements between adjacent conductive patterns and photoelectric devices. These spacers act as mediators that prevent direct electrical contact and interference between neighboring pixels, enabling closer placement while maintaining signal integrity.
2Manufacturing precision
If separation structures and electrode structures are formed separately, then structural precision is improved, but manufacturing complexity increases
Solution Approach 1:
The patent combines the formation of separation structures and electrode structures into a single integrated manufacturing process. Both structures are formed simultaneously using the same insulating spacer material deposited in the same process step, reducing the total number of manufacturing steps while maintaining the precision of both structures.
Solution Approach 2:
The insulating spacer serves multiple functions simultaneously: it acts as a separation structure to isolate adjacent pixels, and as an insulating layer for the electrode structures. This multi-functionality eliminates the need for separate structures, simplifying the manufacturing process while maintaining structural precision.
3Area of stationary object
If compact size is achieved by reducing substrate area, then device size is reduced, but space for separation structures is limited
Solution Approach 1:
The patent extends separation structures in the vertical dimension by using insulating spacers that protrude from the substrate surface. This allows effective pixel separation without increasing the horizontal footprint, enabling compact device size while maintaining adequate separation between adjacent pixels.
Solution Approach 2:
The patent uses thin film insulating spacers to achieve separation between pixels. These thin films provide effective electrical isolation while occupying minimal space, allowing compact device design with sufficient separation structures for preventing interference.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design increases productivity and performance by minimizing interference between photoelectric devices, allowing for more efficient light conversion and signal transmission, thereby achieving compact size and high resolution.
Implementation Method 1
a photoelectric device disposed within a semiconductor substrate
Data Source
AI summary
An image sensing device includes a photoelectric device disposed within a semiconductor substrate, and a separation structure and electrode structures disposed within the semiconductor substrate, and surrounding the photoelectric device. The separation structure includes a first conductive pattern, and a first insulating spacer between the first conductive pattern and the semiconductor substrate. A respective one of the electrode structures includes a second conductive pattern, and a second insulating spacer between the second conductive pattern and the semiconductor substrate. The first conductive pattern and the second conductive pattern are formed of the same conductive material.