Image Sensor Separation Structure for Photoelectric Efficiency
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Solution Overview
Problem
Existing image sensors face challenges in achieving compact size and high resolution while maintaining effective photoelectric conversion efficiency, particularly in integrating color filters and electrodes without compromising the structural integrity and performance.
Innovation Solution
The image sensor design includes an insulating pattern on a semiconductor substrate with openings for color filters, a capping insulating layer, a separation structure with different material layers, and a photoelectric layer on the electrode, which allows for efficient light conversion and minimizes damage during fabrication processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If color filters and electrodes are integrated in conventional image sensors, then photoelectric conversion efficiency is improved, but structural integrity and performance are compromised during fabrication
Solution Approach 1:
The patent introduces a separation structure comprising first and second insulating layers as an intermediary between the color filter and the electrode. This mediator prevents direct contact and potential damage during fabrication while maintaining the necessary electrical and optical functions, thus resolving the contradiction between integration efficiency and structural integrity
Solution Approach 2:
The separation structure is divided into multiple insulating layers (first insulating layer and second insulating layer) with different materials, allowing each layer to serve specific protective and functional purposes. This segmentation enables better control over the interaction between color filters and electrodes during fabrication
2Volume of moving object
If compact size is achieved in image sensors, then device dimensions are reduced, but manufacturing precision and performance are compromised
Solution Approach 1:
The patent addresses size reduction by optimizing the vertical stacking of layers (insulating pattern, color filter, capping insulating layer, separation structure, electrode, photoelectric layer) rather than expanding horizontally. This vertical integration maintains compact footprint while preserving manufacturing precision through controlled layer thicknesses and material properties
3Measurement precision
If high resolution is achieved in image sensors, then image quality is improved, but device complexity and fabrication difficulty increase
Solution Approach 1:
The patent applies different materials with specific properties at different locations: the first insulating layer uses a material with a etching rate different from the second insulating layer, allowing selective removal and precise patterning. This local differentiation of material properties enables high-resolution fabrication without proportionally increasing overall complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the resolution and stability of the image sensor by preventing damage to the color filters and electrodes during processing, leading to improved productivity and performance with increased photoelectric conversion efficiency.
Implementation Method 1
a photoelectric layer disposed on the first electrode
Data Source
AI summary
An image sensor includes an insulating pattern disposed on a semiconductor substrate and having an opening, a color filter disposed within the opening of the insulating pattern, a capping insulating layer disposed on the color filter, a first electrode disposed on the capping insulating layer and having a portion overlapping with the color filter, a separation structure surrounding a side surface of the first electrode, and a photoelectric layer disposed on the first electrode. The separation structure includes a first insulating layer and a second insulating layer formed of different material.