Solid-State Devices TRIZ Cases

A 3D nonvolatile memory device uses segmented charge storage patterns isolated between conductive layers and semiconductor pillars.

An organic light-emitting element uses an intermediate layer with specific assist dopant concentrations to balance carrier transport across RGB layers.

A hygroscopic agent layer absorbs water molecules penetrating through a porous sealing film, preventing deterioration of organic light-emitting elements.

A micro-LED display panel uses a transparent plate to position drivers on its outer edge for improved power distribution.

An OLED structure uses multiple light emitting layers with specific optical lengths to control emission wavelengths.

Flowable vapor deposition fills voids between switching elements and top electrodes, reducing cross-talk while simplifying fabrication complexity.

Laser lift-off releases lateral micro-LEDs from a donor wafer while electromagnetic force positions electrodes, eliminating complex pick-up arrays.

Improved N-SADP process creates equally-spaced word lines using patterned core bodies and spacer material layers.

Selective sacrificial layer removal creates distinct nanowire gaps, enabling mixed-thickness gate dielectrics on a single substrate.

A concave reflective shield redirects photons back onto the photodiode, increasing absorption depth and quantum efficiency despite smaller pixel sizes.

A semiconductor ring structure with high-k dielectric films manages layer flatness during manufacturing.

Segmented wavelength converting layers convert blue or green light to infrared for uniform skin penetration and long-lasting treatment.

An ionic liquid matrix disperses semiconductor nanoparticle phosphors, preventing agglomeration and photooxidation that impair optical characteristics.

Nanowire crossing regions form avalanche photodiodes that replace bulky vacuum tubes, enabling compact single photon detection with high gain.

A separation structure with dual insulating layers protects image sensor electrodes and color filters during fabrication.

Doped passivation layers seal trench defects in backside illuminated sensors, reducing leakage current and improving radiation detection accuracy.

A conductive layer buried-type substrate embeds a metal layer between silicon oxidation and single crystal semiconductor layers.

A continuous printing nozzle assembly uses sheath gas to confine material flow and an absorbent layer to capture excess fluid during deposition.

Modifying phase change material switching volumes via reactive ion etching to tailor device characteristics on a single wafer.

Groove in insulating film increases resistance to suppress drive current leakage between adjacent organic EL devices.

A circular polarizing plate with pixel-specific retardation regions modifies reflected light polarization to reduce leakage in organic light emitting devices.

Gradient surface affinity on OLED electrodes prevents dewetting and ensures uniform film layers during inkjet printing.

A full-color organic electroluminescent device uses distinct dopants in sequential emitting layers to manage light emission.

A split-gate flash memory manufacturing method uses a shared word line to control multiple arrays.

Merging gate and pixel electrodes reduces five photo-etching steps to two, lowering contamination risk and boosting yield.

A semiconductor device uses perpendicular substance layers to define resistance variable elements at crossing regions.

A display device adjusts video signals using accumulated light emission data to balance pixel luminance and inhibit burn-in.

A memory array achieves byte accessibility through voltage combinations applied to page and source control devices.

An RBGB pixel arrangement increases blue sub-pixel quantity to support high-resolution organic light-emitting diode displays.

Target patterns in pixel electrodes enable accurate identification and repair of defective pixels, resolving short circuit luminance defects.

A 3D semiconductor memory device arranges pillars and interconnections at varying distances to reduce bit line capacitance.

A semiconductor device integrates a magnetic tunnel junction on lower conductive patterns with through electrodes to enhance electrical characteristics.

Voltage generator adjusts control signal activation levels using a temperature sensor to maintain read reliability across thermal variations.

Multi-layered OLED cathode structure uses controlled layer thicknesses to generate destructive interference.

A semiconductor device uses asymmetric inner leads to position the high-temperature region of a laser element over a wider mounting area.

Segmented thermal oxidation creates distinct gate insulating films, reducing stress to preserve DRAM refresh reliability.

Segmenting a micro-LED array into two groups bonded to dual-polarity substrates eliminates complex sequential separation steps and reduces manufacturing costs.

A control circuit charges data lines with a read reference signal using segmented transistors and constant current elements.

A 3,6-carbazole copolymer with tailored side chains balances charge mobility and solubility in organic solar cells.

Tapered silicon wafer edges reduce oxygen ion dose during SIMOX processing to prevent buried oxide exposure.

Spatially varying refractive indices in a polymer dispersed liquid crystal film correct wavelength shift and color variation.

An insulating metal oxide layer with lower redox potential than silicon prevents dark spot generation in flexible organic electroluminescent elements.

A charge storage transistor gate stack uses laterally projecting high-k dielectric feet to store electrical charge for multi-state programming.

Lateral cooling channels in the silicon substrate improve heat dissipation rates while maintaining minimal package thickness for active areas.

Asymmetric offset column stairs reduce lateral etch distance to resolve the trade-off between high memory density and complex manufacturing steps.

A cyclometalated transition metal complex emits light across the blue to red spectrum using triplet states.

Silicon compound and metal films fill trenches to increase average refractive index for enhanced light reception.

A light emitting array structure uses a detachable redistribution layer to enable flip-chip bonding of pixel units.

A MEMS device integrates temperature sensors on a dielectric layer to detect thermal gradients along specific axes for operational compensation.

An elastomer assembly absorbs perpendicular and parallel shocks to protect the detector array within a compact housing.

An intermediate optical layer bridges refractive index differences between color filters and encapsulation substrates in organic light-emitting displays.

Shield wiring pattern connected to ground potential isolates detection electrodes from drive signal lines in vibration sensors.

Transfer printing deposits organic light emitting layers on convexities to enable flexible thickness control.

Cross-linked copolymer raises glass transition temperature and solvent resistance, reducing driving voltage in OLEDs.

Layered and columnar sealing structures maintain uniform cell gaps to resolve transmittance non-uniformity caused by conventional sealing methods.

A three-layer Ti-Ag-Ti source-drain electrode stack simplifies organic light emitting display device fabrication.

Placing an auxiliary electrode between insulating layers reduces cathode resistance and maintains aperture ratio in large-area displays.

Two-stage silicidation controls gate resistance and threshold voltage variation by adjusting metal layers independently.

In-mold decoration film transfers phosphor to LED die via single molding process, eliminating electrophoresis coating costs.

A TADF organic electroluminescent device uses specific host and dopant energy levels to enable efficient reverse intersystem crossing.

Novel organic compound optimizes charge transport to enhance luminance and lifespan while maintaining low driving voltage.

A graphene edge electrode absorbs oxygen from the oxide layer to form conductive filaments in resistive random access memory cells.

Adhesive encapsulation secures bonding wires within an image sensor package cavity.

Segmented pixel defining layers block outgassing and absorb light, reducing defects in OLED manufacturing.

An asymmetric resin package design optimizes lateral wall widths to improve mechanical strength and reduce crack occurrence while maintaining light output.

A light-emitting device uses non-overlapping conduction holes to connect electrodes and wiring without height differences.

A lead selenide detector uses a thermal sensor to compensate for temperature variations in gas analysis.

Interdigital capacitors integrated within flexible display conductive layers detect bending states through capacitance changes.

An insulating layer shields conductive sidewalls in LCD panels, preventing corrosion after fringe circuit removal.

Protruding active regions maintain constant width to prevent side etching variations that cause inconsistent wiring resistance.

Vertical stacking of host and dopant sources with independent nozzles resolves uniformity trade-offs in large-area OLED manufacturing.

An oxynitride layer on metal layers cuts visible spectrum reflection by 7% to 50%, improving IPS visibility while maintaining conductivity.

A light emitting device structure uses a dielectric material between the contact and conductive support substrate to create an insulating capacitor layer.

A gang bonding process assembles matrix light-emitting elements onto a substrate using heat and compressive force.

A pixel-array substrate uses a segmented buffer layer and metal annulus to block stray light between photodiodes.

Continuous spray deposition forms a stable floating layer on a subphase, preventing subphase disruption and ensuring uniform coverage.

A resistive random access memory array shares a single source line across multiple bit lines to reduce electrical resistance.

Shared FIFO circuits reduce via count while CRC and ECC codes ensure reliable data transfer between stacked semiconductor dies.

Thermal oxidation adjusts germanium concentration and reduces channel thickness to tune p-channel threshold voltage while minimizing process variability.

Composite electrode structures pair low-resistance inner layers with high-hardness outer shells to maintain conductivity under vibration and sulfur exposure.

Segmented deep trenches absorb stray light and reflect incident photons to reduce optical crosstalk between adjacent photodiodes.

A nitride semiconductor device with an InAlGaN barrier layer and specific composition ratios to optimize interface conduction band energy.

Larger first signal vias secure binding leads against falling off during line binding while smaller second vias route electrode leads in micro displays.

Insulating nanotube mediates gate dielectric deposition on carbon nanotubes, resolving inert surface challenges.

A graphene barrier layer separates metal electrodes from the resistive switching functional layer in nonvolatile memory devices.

Heat sink patterns absorb joule heat from variable resistance patterns to prevent unintended data writing in adjacent memory cells.

Auxiliary wiring connects segmented electrodes to improve luminance homogeneity in organic light emitting displays.

A finger biometric sensor combines thin film transistor electrodes with a monocrystalline integrated circuit for signal processing.

A resistive memory device adjusts cell resistance based on distance from access points to reduce signal overshoot.

A pixel structure uses lateral electric fields to transport photogenerated charges toward a floating diffusion region for accumulation.

Varying pad surface areas guide uniform connector distribution during reflow, achieving precise tilt angles without complex fabrication steps.

A stochastic semiconductor neuron circuit uses sigmoid input output characteristics to control current probability via noise injection.

Dedicated routing interconnects expand function-specific block inputs using neighboring logic outputs.

A vertically integrated backside illuminated image sensor stacks logic circuits above photodiodes using bonding pads and vias.

Integrating driver chips onto a bendable substrate eliminates separate circuit boards, reducing internal space in electronic devices.

Segmented fabrication maintains Josephson junction width accuracy while producing varied magnetic inductance values.

A rear bonding structure uses a sacrificial layer and pad electrodes to electrically connect sub-display panels via a conductive film.

A transparent conductive spacer layer absorbs laser energy during substrate removal, preventing metal droplet formation and preserving electrical reliability.

A three-dimensional memory device uses a p-i-n junction structure to detect hole current for high-speed data retrieval.