Solid-State Devices TRIZ Cases

A 3D nonvolatile memory device uses segmented charge storage patterns isolated between conductive layers and semiconductor pillars.

An organic light-emitting element uses an intermediate layer with specific assist dopant concentrations to balance carrier transport across RGB layers.

A hygroscopic agent layer absorbs water molecules penetrating through a porous sealing film, preventing deterioration of organic light-emitting elements.

A micro-LED display panel uses a transparent plate to position drivers on its outer edge for improved power distribution.

An OLED structure uses multiple light emitting layers with specific optical lengths to control emission wavelengths.

Flowable vapor deposition fills voids between switching elements and top electrodes, reducing cross-talk while simplifying fabrication complexity.

Laser lift-off releases lateral micro-LEDs from a donor wafer while electromagnetic force positions electrodes, eliminating complex pick-up arrays.

Improved N-SADP process creates equally-spaced word lines using patterned core bodies and spacer material layers.

Selective sacrificial layer removal creates distinct nanowire gaps, enabling mixed-thickness gate dielectrics on a single substrate.

A concave reflective shield redirects photons back onto the photodiode, increasing absorption depth and quantum efficiency despite smaller pixel sizes.

A semiconductor ring structure with high-k dielectric films manages layer flatness during manufacturing.

Segmented wavelength converting layers convert blue or green light to infrared for uniform skin penetration and long-lasting treatment.

An ionic liquid matrix disperses semiconductor nanoparticle phosphors, preventing agglomeration and photooxidation that impair optical characteristics.

Nanowire crossing regions form avalanche photodiodes that replace bulky vacuum tubes, enabling compact single photon detection with high gain.

A separation structure with dual insulating layers protects image sensor electrodes and color filters during fabrication.

Doped passivation layers seal trench defects in backside illuminated sensors, reducing leakage current and improving radiation detection accuracy.

A conductive layer buried-type substrate embeds a metal layer between silicon oxidation and single crystal semiconductor layers.

A continuous printing nozzle assembly uses sheath gas to confine material flow and an absorbent layer to capture excess fluid during deposition.

Modifying phase change material switching volumes via reactive ion etching to tailor device characteristics on a single wafer.

Groove in insulating film increases resistance to suppress drive current leakage between adjacent organic EL devices.

A circular polarizing plate with pixel-specific retardation regions modifies reflected light polarization to reduce leakage in organic light emitting devices.

Gradient surface affinity on OLED electrodes prevents dewetting and ensures uniform film layers during inkjet printing.

A full-color organic electroluminescent device uses distinct dopants in sequential emitting layers to manage light emission.

A split-gate flash memory manufacturing method uses a shared word line to control multiple arrays.

Merging gate and pixel electrodes reduces five photo-etching steps to two, lowering contamination risk and boosting yield.

A semiconductor device uses perpendicular substance layers to define resistance variable elements at crossing regions.

A display device adjusts video signals using accumulated light emission data to balance pixel luminance and inhibit burn-in.

A memory array achieves byte accessibility through voltage combinations applied to page and source control devices.

An RBGB pixel arrangement increases blue sub-pixel quantity to support high-resolution organic light-emitting diode displays.

Target patterns in pixel electrodes enable accurate identification and repair of defective pixels, resolving short circuit luminance defects.

A 3D semiconductor memory device arranges pillars and interconnections at varying distances to reduce bit line capacitance.

A semiconductor device integrates a magnetic tunnel junction on lower conductive patterns with through electrodes to enhance electrical characteristics.

Voltage generator adjusts control signal activation levels using a temperature sensor to maintain read reliability across thermal variations.

Multi-layered OLED cathode structure uses controlled layer thicknesses to generate destructive interference.

A semiconductor device uses asymmetric inner leads to position the high-temperature region of a laser element over a wider mounting area.

Segmented thermal oxidation creates distinct gate insulating films, reducing stress to preserve DRAM refresh reliability.

Segmenting a micro-LED array into two groups bonded to dual-polarity substrates eliminates complex sequential separation steps and reduces manufacturing costs.

A control circuit charges data lines with a read reference signal using segmented transistors and constant current elements.

A 3,6-carbazole copolymer with tailored side chains balances charge mobility and solubility in organic solar cells.

Tapered silicon wafer edges reduce oxygen ion dose during SIMOX processing to prevent buried oxide exposure.

Spatially varying refractive indices in a polymer dispersed liquid crystal film correct wavelength shift and color variation.

An insulating metal oxide layer with lower redox potential than silicon prevents dark spot generation in flexible organic electroluminescent elements.

A charge storage transistor gate stack uses laterally projecting high-k dielectric feet to store electrical charge for multi-state programming.

Lateral cooling channels in the silicon substrate improve heat dissipation rates while maintaining minimal package thickness for active areas.

Asymmetric offset column stairs reduce lateral etch distance to resolve the trade-off between high memory density and complex manufacturing steps.

A cyclometalated transition metal complex emits light across the blue to red spectrum using triplet states.

Silicon compound and metal films fill trenches to increase average refractive index for enhanced light reception.

A light emitting array structure uses a detachable redistribution layer to enable flip-chip bonding of pixel units.

A MEMS device integrates temperature sensors on a dielectric layer to detect thermal gradients along specific axes for operational compensation.

An elastomer assembly absorbs perpendicular and parallel shocks to protect the detector array within a compact housing.