PRAM Heat Sink Patterns for Joule Heat Dissipation
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Solution Overview
Problem
Increased integration of Phase Change Random Access Memory (PRAM) devices leads to joule heat generated during data writing affecting adjacent memory cells, causing unintended data writing due to high temperatures.
Innovation Solution
Incorporation of heat sink patterns with higher thermal conductivity than variable resistance patterns, coupled to the ground voltage line and positioned adjacent to variable resistance patterns, to absorb and radiate joule heat away from adjacent cells.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If integration of PRAM devices is increased, then device density is improved, but joule heat affects adjacent memory cells causing unintended data writing
Solution Approach 1:
A heat sink pattern is introduced as an intermediary structure between variable resistance patterns. This heat sink acts as a thermal mediator that absorbs and dissipates joule heat generated during writing operations, preventing heat transfer to adjacent memory cells while allowing continued high-density integration
Solution Approach 2:
The heat sink pattern is strategically positioned only in specific locations between variable resistance patterns where heat transfer is problematic. This localized approach provides thermal management precisely where needed without adding unnecessary structures elsewhere, maintaining device density while addressing heat issues
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents or reduces joule heat transfer to adjacent memory cells, enabling higher integration and accurate data writing by effectively managing heat generated during the writing process.
Implementation Method 1
joule heat generated during the writing of data
Implementation Method 2
heat sink patterns that are level with the variable resistance patterns and coupled to a ground voltage line
Data Source
AI summary
Example embodiments provide a nonvolatile memory device using resistive elements. The nonvolatile memory device may include a semiconductor substrate, a plurality of variable resistance patterns on the semiconductor substrate, and a plurality of heat sink patterns that are level with the variable resistance patterns and coupled to a ground voltage.