Semiconductor Imaging Pixel Layout for Proximity and Classical Imaging
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Solution Overview
Problem
Current semiconductor imaging systems require separate chips for proximity sensing and classical imaging, leading to increased complexity, cost, and space consumption due to the need for additional components and data handling.
Innovation Solution
A semiconductor imaging apparatus with isolated light detection devices, including a SPAD array and an optical filter with gaps, allowing unfiltered light to reach the silicon substrate for both proximity sensing and classical imaging, enabling the integration of both functions within a single pixel using a single chip.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If separate chips are used for proximity sensing and classical imaging, then measurement precision for both functions is improved, but device complexity and space consumption increase
Solution Approach 1:
The patent merges proximity sensing and classical imaging functions into a single pixel by integrating both a light detection device (for proximity sensing) and a photodiode (for classical imaging) within the same pixel structure. This consolidation eliminates the need for separate chips while maintaining the measurement precision of both functions through shared optical and electronic components.
Solution Approach 2:
The pixel structure is designed with multi-functionality, where the same pixel can perform both proximity sensing via the light detection device and classical imaging via the photodiode. This universal design allows a single chip to handle multiple imaging tasks simultaneously, reducing device complexity while preserving measurement capabilities.
2Reliability
If separate chips are used for proximity sensing and classical imaging, then reliability of each function is improved, but manufacturing cost and ease of manufacture worsen
Solution Approach 1:
By combining both imaging functions in a single pixel structure on one chip, the patent simplifies the manufacturing process. Instead of producing, testing, and assembling multiple separate chips, manufacturers can fabricate both functions simultaneously using standard semiconductor processing techniques, improving ease of manufacture while maintaining reliability through integrated design.
3Measurement precision
If optical filter covers entire light detection device, then proximity sensing accuracy is improved, but classical imaging capability is lost
Solution Approach 1:
The optical filter is applied selectively: it covers the light detection device to ensure accurate proximity sensing by filtering unwanted wavelengths, while leaving the photodiode exposed to capture full-spectrum light for classical imaging. This local differentiation allows each component to perform its specific function optimally without interfering with the other.
Solution Approach 2:
The pixel structure is segmented into distinct functional zones: the light detection device area covered by the optical filter for proximity sensing, and the photodiode area without the filter for classical imaging. This spatial segmentation enables both functions to operate simultaneously with their respective optical requirements met.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for simultaneous proximity sensing and classical imaging, such as greyscale or color imaging, within a single pixel, reducing the need for multiple chips and simplifying IC design, read-out, and data handling, thereby lowering costs and enhancing integration.
Implementation Method 1
an optical filter arranged to filter light incident on the light detection devices
Implementation Method 2
including gaps for allowing unfiltered light to reach the silicon substrate between neighboring light detection devices
Implementation Method 3
an isolation structure for stopping light generated charge carriers in the silicon substrate from reaching the light detection devices
Implementation Method 4
a plurality of photodiodes for detecting the charge carriers in the silicon substrate
Data Source
AI summary
A semiconductor imaging apparatus including a light detection device in a silicon substrate, an optical filter arranged to filter light incident on the light detection device and including a gap for allowing unfiltered light to reach the silicon substrate, an isolation structure for stopping light generated charge carriers in the silicon substrate from reaching the light detection device, and a photodiode for detecting the charge carriers.