Immersion-Cooled Semiconductor Package With Low-Parasitic Leads

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Solution Overview

Problem

Existing cooling systems for semiconductor devices introduce parasitic capacitances and inductances, limiting heat removal capacity and degrading device performance, while conventional substrate-based cooling methods are inefficient and introduce performance-degrading parasitics.

Innovation Solution

A semiconductor device configured for immersion cooling with a low-impedance or controlled-impedance electrical interface, utilizing planar stripline leads and a fin-like configuration to enhance heat dissipation and minimize parasitics, coupled with a fluid-filled chamber for efficient thermal management.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If substrate-based cooling solutions are used, then heat removal capacity is improved, but parasitic capacitances and inductances increase degrading device performance

Engineering Contradiction:
Improveheat removal capacityVSAvoiddevice performance
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

The patent extracts the cooling function from the substrate by implementing immersion cooling, where the semiconductor device is directly immersed in a coolant bath. This separates the thermal management function from the electrical substrate, eliminating parasitic capacitances and inductances that would otherwise be introduced by substrate-based cooling solutions while maintaining effective heat removal capacity

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent introduces an intermediary coolant medium (such as dielectric fluid or liquid metal) that serves as the heat transfer medium. This intermediary allows thermal conduction from the semiconductor device to the cooling system without requiring direct physical attachment to a substrate, thereby avoiding parasitic electrical effects while maintaining thermal coupling

Inventive Principle:
Principle #24Intermediary (Mediator)

2Strength

If conventional cooling materials with specific mechanical or electrical characteristics are used, then structural integrity is maintained, but thermal conductivity is reduced

Engineering Contradiction:
Improvemechanical characteristicsVSAvoidthermal conductivity
Core Design Contradiction:
StrengthVSTemperature

Solution Approach 1:

The patent employs composite material strategies by combining the semiconductor device with coolant fluids having superior thermal properties. The system utilizes materials like dielectric fluids or liquid metals that provide both the necessary mechanical compatibility and significantly enhanced thermal conductivity compared to conventional solid substrates, achieving optimal heat transfer while maintaining structural integrity

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution provides effective heat removal with reduced parasitics, enabling high thermal conductivity and low impedance interconnects, thus maintaining device performance and efficiency.

Implementation Method 1

Historically, semiconductor die has been cooled by thermal conduction through a substrate that the semiconductor die was attached to

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

a first lead comprising a planar stripline, a second lead comprising a planar stripline... a low impedance or controlled-impendence interconnect between the first semiconductor die and circuitry external to the semiconductor device

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS20250349679A1Semiconductor device configured with immersion cooling and reduced parasitics
Publication Date: 2025.11.13 ANALOG POWER CONVERSION LLC
  • US20250349679A1 patent drawing
  • US20250349679A1 patent drawing
  • US20250349679A1 patent drawing

AI summary

A semiconductor device including one or more semiconductor dies is configured for cooling by immersion in a coolant contained in a chamber. The semiconductor device provides efficient dissipation of heat from the one or more semiconductor dies to the coolant while providing a low impedance or controlled-impudence electrical interconnect between the one or more semiconductor dies and circuitry outside the chamber. The semiconductor device may be configured in the shape of a fin. The semiconductor device may have a plurality of co-planar leads that pass through a wall of the chamber.