Imprint Lithography Alignment via Scanned Beam Intensity

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Solution Overview

Problem

In lithography, achieving precise alignment of patterns on a substrate is crucial for functional device production, but existing methods are costly and limited by radiation source wavelength or numerical aperture, necessitating a more efficient and cost-effective alignment technique.

Innovation Solution

An imprint lithography alignment apparatus and method using an alignment radiation beam to scan and detect intensity changes from alignment marks on the imprint template and substrate gratings, allowing for precise positioning through analysis of modulation and overlap, enabling accurate coarse and fine alignment without the limitations of traditional methods.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If photolithography technologies (immersion lithography, EUV lithography) are used to achieve smaller features, then feature size is reduced and feature density is increased, but manufacturing cost increases significantly

Engineering Contradiction:
Improvefeature sizeVSAvoidmanufacturing cost
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent replaces optical lithography systems (which use complex radiation sources and projection systems) with a mechanical imprinting system. The imprint template physically contacts the substrate to transfer patterns, eliminating the need for expensive EUV sources and immersion optics while achieving comparable or better resolution.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent uses an imprint template that contains a precise copy of the desired pattern. This template is directly pressed onto the substrate to transfer the pattern, avoiding the need for complex optical projection systems and enabling cost-effective production of high-density features.

Inventive Principle:
Principle #26Copying

2Manufacturing precision

If alignment apparatus is used to align patterns accurately, then pattern alignment accuracy is improved, but device complexity increases

Engineering Contradiction:
Improvepattern alignment accuracyVSAvoidalignment apparatus complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The imprint template includes built-in alignment marks that automatically enable alignment with the substrate. The template's own structural features serve the dual purpose of pattern transfer and alignment reference, eliminating the need for separate complex alignment apparatus.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent combines the alignment marks with the imprint template structure itself. The alignment marks are integrated into the template design, merging the alignment function with the pattern transfer function, thereby reducing overall system complexity.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach provides accurate and cost-effective alignment of imprint templates and substrates, ensuring proper pattern registration and device functionality while avoiding the high costs associated with advanced lithographic technologies like EUV lithography.

Implementation Method 1

detecting an intensity of radiation reflected or transmitted from the area

Methodology Applied
Scientific EffectReflection: Reflection

Implementation Method 2

detecting an intensity of radiation reflected or transmitted from the area

Methodology Applied
Scientific EffectTransmission:

Data Source

PatentUS9958774B2Imprint lithography
Publication Date: 2018.05.01 ASML NETHERLANDS BV
  • US9958774B2 patent drawing
  • US9958774B2 patent drawing
  • US9958774B2 patent drawing

AI summary

A method of determining a position of an imprint template in an imprint lithography apparatus is disclosed. In an embodiment, the method includes illuminating an area of the imprint template in which an alignment mark is expected to be found by scanning an alignment radiation beam over that area, detecting an intensity of radiation reflected or transmitted from the area, and identifying the alignment mark via analysis of the detected intensity.