In-Pixel Amplification Circuitry for Image Sensor Noise Reduction

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Solution Overview

Problem

Conventional image sensors face noise issues during readout operations, requiring large capacitors that occupy significant substrate area, making it challenging to achieve both global shutter capabilities and reduced noise.

Innovation Solution

Incorporating in-pixel amplification circuitry with first and second amplification capacitors, where the capacitance of the second capacitor is significantly larger than the first, allowing for signal amplification and reducing the need for large storage capacitors, thereby minimizing noise and substrate area usage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If large capacitors are included in imaging pixels to reduce noise during readout, then noise is reduced, but substrate area occupied increases

Engineering Contradiction:
ImprovenoiseVSAvoidsubstrate area
Core Design Contradiction:
Object-affected harmful factorsVSArea of stationary object

Solution Approach 1:

The pixel circuit is divided into multiple functional blocks including photodiode, transfer transistor, floating diffusion, source follower transistor, and amplification capacitors. This segmentation allows each component to be optimized independently, enabling noise reduction through strategic capacitor placement while minimizing overall substrate area.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent utilizes vertical substrate layers to accommodate circuit components. The amplification capacitors are positioned in different vertical layers, allowing three-dimensional integration that reduces the horizontal substrate footprint while maintaining sufficient capacitance values for noise reduction.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Reliability

If in-pixel amplification circuitry is added to reduce noise and enable global shutter, then performance is improved, but device complexity increases

Engineering Contradiction:
Improveglobal shutter capabilityVSAvoidcircuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The amplification function is merged directly into the pixel circuit by integrating amplification capacitors within each pixel. This eliminates the need for separate post-pixel amplification stages, reducing overall system complexity while achieving the desired noise reduction and global shutter functionality.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The floating diffusion node serves multiple functions: charge storage from the photodiode, signal amplification through the source follower transistor, and coupling to the amplification capacitors. This multi-functionality reduces the need for additional dedicated components, thereby managing circuit complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The in-pixel amplification circuitry effectively reduces noise and enables global shutter operations while minimizing the size of capacitors required, thus optimizing image sensor design for improved performance and compactness.

Implementation Method 1

Each image pixel may include a photodiode for generating charge in response to incident light

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Data Source

PatentUS10958861B2Image sensors with in-pixel amplification circuitry
Publication Date: 2021.03.23 SEMICON COMPONENTS IND LLC
  • US10958861B2 patent drawing
  • US10958861B2 patent drawing
  • US10958861B2 patent drawing

AI summary

An image sensor may include an imaging pixel, readout circuitry, and amplification circuitry coupled between the imaging pixel and the readout circuitry. Correlated double sampling may be used to sample a reset voltage and a signal voltage from the imaging pixel. The difference between the reset voltage and the signal voltage may reflect the amount of light received by the imaging pixel during an integration time. The amplification circuitry may amplify the difference between the reset voltage and the signal voltage. The amplification circuitry may include a source follower transistor coupled between first and second capacitors, with the second capacitor having a greater capacitance than the first capacitor. The amplification circuitry may be formed only from n-type metal-oxide-semiconductor transistors. The amplification circuitry may consume power dynamically as opposed to consuming static power for minimal power consumption requirements.