Inclined Side Wall Semiconductor Package Shielding
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Solution Overview
Problem
Existing semiconductor packages face challenges in forming a uniform shield layer on the upper surfaces and side walls of semiconductor chips sealed with a sealing resin layer, as the side surfaces are difficult to coat efficiently, leading to increased thickness and time requirements for effective electromagnetic shielding.
Innovation Solution
A method involving bonding semiconductor chips to a wiring board, sealing with a resin, individualizing the chips by cutting along inclined lines to create larger upper and lower surfaces with inclined side walls, and forming a conductive shield layer on these surfaces using techniques like rotating cutting blades or laser processing to ensure uniform film thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a shield layer is formed on the upper surface and side surfaces of a semiconductor chip with perpendicular side walls, then electromagnetic shielding is achieved, but the film thickness becomes non-uniform and the formation time increases
Solution Approach 1:
The patent applies asymmetry by changing the side wall geometry from perpendicular to inclined. The side walls are formed with a specific inclination angle (e.g., 45 degrees) relative to the upper surface, which asymmetrically modifies the surface geometry to enable uniform shield layer deposition. This asymmetric shape allows the shielding coating to be applied uniformly across all surfaces including side walls, thereby maintaining electromagnetic shielding effectiveness while reducing formation time.
Solution Approach 2:
The patent changes the geometric parameter of the side walls from vertical (90 degrees to upper surface) to inclined (e.g., 45 degrees to upper surface). This parameter change in wall inclination angle fundamentally alters how the shield layer deposits on the surfaces, enabling uniform film thickness achievement on both upper and side surfaces simultaneously, thus resolving the time and uniformity contradiction.
2Reliability
If a shield layer is formed on the side surfaces of semiconductor chips with perpendicular side walls, then electromagnetic shielding is achieved, but the film thickness uniformity deteriorates
Solution Approach 1:
The patent applies asymmetry by changing the side wall geometry from perpendicular to inclined. The side walls are formed with a specific inclination angle (e.g., 45 degrees) relative to the upper surface, which asymmetrically modifies the surface geometry to enable uniform shield layer deposition. This asymmetric shape allows the shielding coating to be applied uniformly across all surfaces including side walls, thereby maintaining electromagnetic shielding effectiveness while reducing formation time.
Solution Approach 2:
The patent changes the geometric parameter of the side walls from vertical (90 degrees to upper surface) to inclined (e.g., 45 degrees to upper surface). This parameter change in wall inclination angle fundamentally alters how the shield layer deposits on the surfaces, enabling uniform film thickness achievement on both upper and side surfaces simultaneously, thus resolving the time and uniformity contradiction.
Data Source
AI summary
A method of manufacturing a semiconductor package that includes: disposing a semiconductor chip on a support board; sealing the semiconductor chips with a sealant to form a sealed body on the support board, thereby forming sealed semiconductor chips; and forming a rewiring layer and bumps on a side where the semiconductor chip is disposed, after the support board is removed from the sealed body The method also includes an individualizing step of cutting the sealed body along regions corresponding to division lines on the support board, to perform individualization in such a manner that the sealed semiconductor chips each have an upper surface and a lower surface larger than the upper surface, with a side wall inclined from the upper surface toward the lower surface; and a step of forming a conductive shield layer on the upper surfaces and the side walls of the plurality of sealed semiconductor chips.