Indium Alkoxide Composition for High-Mobility Oxide Layers
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Solution Overview
Problem
Existing methods for producing indium oxide-containing layers via printing processes face issues such as colloidal instability, incomplete formation, and high sheet resistance due to particle concepts, and inhomogeneities and roughness in sol-gel processes, which result in low charge carrier mobilities and poor layer quality.
Innovation Solution
A liquid indium alkoxide-containing composition with a specific solvent combination, including ethyl lactate, anisole, tetrahydrofurfuryl alcohol, and butyl acetate, which improves storage stability and layer homogeneity, allowing for the production of high-quality indium oxide layers with low roughness and enhanced charge carrier mobilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If particle concepts are used for producing indium oxide layers, then the layers can be formed by sintering, but colloidal instability requires dispersing additives and incomplete formation results in high sheet resistance
Solution Approach 1:
The patent changes the fundamental parameter of the precursor material from particles to molecular precursors (indium acetate and tin chloride). This molecular-level approach eliminates colloidal instability and enables complete conversion to oxide layers without residual particulate structures, thereby achieving low sheet resistance while maintaining layer formation completeness.
2Ease of manufacture
If sol-gel techniques are used for producing indium oxide layers, then the layers can be produced from solution, but inhomogeneities and roughness result in low charge carrier mobilities
Solution Approach 1:
The patent changes the chemical parameters of the precursor solution by using indium acetate and tin chloride instead of traditional sol-gel precursors. This modification eliminates the formation of inhomogeneous gels and rough surfaces, achieving both solution processability and high layer homogeneity with smooth surfaces that enable high charge carrier mobilities.
3Reliability
If vapor deposition methods are used for producing ITO layers, then high conductivity and transparency can be achieved, but the process is cost-intensive and requires high vacuum
Solution Approach 1:
The patent replaces the mechanical vacuum deposition system with a solution-based printing process. By using indium acetate and tin chloride precursors that can be deposited from solution and converted to conductive oxide layers through thermal treatment, the method achieves comparable conductivity and transparency while eliminating the need for expensive high-vacuum equipment and reducing production costs.
4Ease of manufacture
If indium salt solutions are used as precursors, then the layers can be produced, but higher conversion temperatures are required compared to indium alkoxides
Solution Approach 1:
The patent changes the chemical composition parameter of the precursor from indium salts to indium acetate combined with tin chloride. This specific chemical combination enables complete layer formation and oxide conversion at lower temperatures compared to traditional indium salt solutions, while maintaining good precursor availability and solution processability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables the production of indium oxide layers with improved homogeneity, reduced waviness and roughness, and increased charge carrier mobilities, making them suitable for semiconductor applications.
Implementation Method 1
After spin-coating the solution, the corresponding indium oxide layer is created by thermal treatment at 400 °C
Implementation Method 2
a coating composition containing a metal alkoxide and/or a metal salt is thermally dried on a transparent substrate
Data Source
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AI summary
The present invention relates to a liquid composition containing indium alkoxide, comprising at least one indium alkoxide and at least three solvents L1, L2, and L3, wherein the solvent L1 is selected from the group comprising ethyl lactate, anisole, tetrahydrofurfuryl alcohol, butyl acetate, ethylene glycol diacetate, and ethyl benzoate, and the difference of the boiling points of the two solvents L2 and L3 under SATP conditions is at least 30°C, to a method for the production thereof, and to the use thereof.