Indium Oxide Layers via Anhydrous Alkoxide Precursors
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Solution Overview
Problem
Current methods for producing indium oxide-containing layers via printing processes face challenges such as colloidal instability in particle-based approaches and poor control over layer properties in sol-gel processes, leading to suboptimal electrical properties and structural precision.
Innovation Solution
A liquid phase process using an anhydrous composition of indium halogen alkoxides, where the composition is applied to a substrate, irradiated with electromagnetic radiation, and then thermally converted to form indium oxide-containing layers, allowing for better control over layer properties and achieving higher field-effect mobilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If particle-based printing processes are used to produce indium oxide layers, then the layers can be formed through sintering operations, but the particle dispersions exhibit colloidal instability requiring dispersing additives and result in incomplete layer formation with particulate structures and high resistance
Solution Approach 1:
The patent changes the chemical composition parameters by using indium salts and indium organometallic compounds as precursors instead of particle dispersions. This fundamental parameter change eliminates colloidal instability issues and allows for complete conversion to indium oxide layers without residual particulate structures, resolving the contradiction between layer formation quality and process complexity
Solution Approach 2:
The patent utilizes phase transition from liquid precursor solution to solid indium oxide layer through controlled thermal processing. The precursors undergo decomposition and oxidation phase transitions that enable complete conversion to homogeneous indium oxide layers, eliminating the particulate structure problems inherent in sintering-based particle approaches
2Ease of manufacture
If sol-gel processes are used to produce indium oxide-containing layers, then coating processes can be simplified, but the layers exhibit poor control over layer properties and suboptimal electrical properties
Solution Approach 1:
The patent modifies the chemical parameters by selecting specific indium precursors (indium salts and indium organometallic compounds) with controlled decomposition characteristics. This enables precise control over layer properties such as composition, morphology, and electrical characteristics while maintaining the simplicity of liquid-phase coating processes
Solution Approach 2:
The patent implements feedback control through systematic optimization of processing parameters including precursor concentration, coating conditions, and thermal processing parameters. This feedback mechanism enables precise control over layer properties while maintaining ease of manufacture through liquid-phase deposition
3Productivity
If conventional printing processes are used to deposit semiconductive layers, then continuous operation and lower production costs are achieved, but the charge carrier mobilities and optical transparency are suboptimal
Solution Approach 1:
The patent changes the material parameters by using specifically selected indium precursors that decompose to form high-quality indium oxide layers with superior charge carrier mobilities and optical transparency. These parameter changes enable conventional printing processes to achieve both high productivity and excellent electrical performance
Solution Approach 2:
The patent employs composite precursor systems combining indium salts and indium organometallic compounds that decompose synergistically to form high-performance indium oxide layers. This composite approach maintains the advantages of continuous printing operation while achieving superior electrical and optical properties
4Manufacturing precision
If high energy density is applied to produce fine structures through printing processes, then structural precision is improved, but apparatus complexity increases
Solution Approach 1:
The patent changes the energy input parameters by using controlled thermal processing at moderate temperatures to convert precursors to indium oxide. This parameter change enables fine structure formation through the intrinsic properties of precursor decomposition rather than requiring high energy density, thus avoiding increased apparatus complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This process results in indium oxide layers with improved electrical properties, specifically higher field-effect mobilities, and the ability to produce fine structures without requiring high energy densities, simplifying apparatus complexity and enhancing layer homogeneity.
Implementation Method 1
the composition applied to the substrate is irradiated with electromagnetic radiation of wavelength ≤360 nm
Implementation Method 2
converted thermally to an indium oxide-containing layer
Data Source
AI summary
The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium halogen alkoxide of the generic formula InX(OR)2 where R=alkyl radical and/or alkoxyalkyl radical and X=F, Cl, Br or I and at least one solvent or dispersion medium is, in the sequence of points a) to d), in anhydrous atmosphere, a) applied to the substrate, b) the composition applied to the substrate is irradiated with electromagnetic radiation of wavelength ≦360 nm and c) optionally dried, and then d) converted thermally to an indium oxide-containing layer, to the layers producible by the process and to the use thereof.