Indium-Containing Polymer Films for Fluoride-Resistant Etching
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in forming patterns with high aspect ratios due to insufficient etching resistance of mask patterns against etching gases, particularly fluorocarbon gases, necessitating improved etching masks with enhanced resistance to fluoride radicals.
Innovation Solution
The development of an indium-containing organic polymer film is achieved by infiltrating an organic polymer film with alkylindium having 2 to 4 carbon atoms and oxidizing it to form an indium oxide film, which provides superior etching resistance to fluoride radicals, using trimethylindium as a precursor while ensuring safety and reactivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional organic polymer film is used as an etching mask, then the manufacturing process is simple, but the etching resistance to fluoride radicals is insufficient
Solution Approach 1:
The patent creates a composite material by infiltrating an organic polymer film with indium atoms to form an indium-containing organic polymer film. This composite structure combines the flexibility and ease of processing of organic polymers with the high etching resistance of indium oxide, resolving the contradiction between simple manufacturing and high etching resistance.
Solution Approach 2:
The patent changes the chemical composition parameter of the organic polymer film by introducing indium atoms through infiltration. This parameter change transforms the film from a conventional organic polymer to an indium-containing organic polymer, significantly enhancing etching resistance to fluoride radicals while maintaining the base polymer's processing advantages.
2Manufacturing precision
If the mask pattern is exposed to etching gas for extended periods to achieve high aspect ratio patterns, then the pattern precision is improved, but the mask durability is reduced
Solution Approach 1:
The patent changes the chemical composition of the mask material by incorporating indium into the organic polymer film. This parameter change enables the mask to maintain high etching resistance over extended exposure periods, allowing both high pattern precision and extended mask durability to be achieved simultaneously.
3Ease of manufacture
If trimethylindium is used as a precursor for indium infiltration, then the reactivity is high, but safety concerns arise
Solution Approach 1:
The patent changes the chemical structure parameter of the indium precursor by using alkylindium compounds with 2-4 carbon atoms in the alkyl group instead of trimethylindium. This parameter change maintains sufficient reactivity for indium infiltration while improving safety by reducing the hazards associated with trimethylindium handling.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The indium-containing organic polymer film enhances etching resistance, allowing precise patterning and improved manufacturing yield of semiconductor devices with complex structures by maintaining stability during etching processes.
Implementation Method 1
infiltrating the organic polymer film with an alkylindium having an alkyl group having 2 to 4 carbon atoms
Implementation Method 2
oxidizing the organic polymer film infiltrated with the alkylindium
Data Source
AI summary
A method for manufacturing an indium-containing organic polymer film includes forming an organic polymer film on a base body, infiltrating the organic polymer film with an alkylindium having an alkyl group having 2 to 4 carbon atoms, and oxidizing the organic polymer film infiltrated with the alkylindium.