Inductive Coil Plasma Source for Peripheral Chamber Cleaning
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Solution Overview
Problem
Current capacitively coupled plasma systems used for chamber cleaning in semiconductor manufacturing degrade electrostatic chucks and are inefficient in cleaning peripheral chamber hardware, leading to reduced manufacturing throughput and substrate yield.
Innovation Solution
A plasma processing chamber with a combination of capacitive and inductive plasma sources, where an inductive coil generates a secondary plasma outside the central region to effectively clean peripheral hardware without damaging the electrostatic chuck, and additional tuning knobs for etch processes are introduced.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If capacitively coupled plasma is used for chamber cleaning, then the plasma can be generated effectively, but the electrostatic chuck lifetime degrades due to high ion energy bombardment
Solution Approach 1:
The plasma generation system is segmented into two independent sources: a capacitive plasma source for generating effective cleaning plasma, and a separate inductive plasma source positioned to protect the electrostatic chuck. This segmentation allows each source to perform its specific function without causing harm to the chuck.
Solution Approach 2:
An inductive plasma source acts as an intermediary mechanism to achieve chamber cleaning without direct capacitive plasma bombardment on the electrostatic chuck. The inductive source generates plasma that can clean the chamber while the electrostatic chuck remains protected from high ion energy.
2Power
If capacitively coupled plasma is concentrated in the center region, then the plasma generation is efficient, but the peripheral chamber hardware cannot be cleaned effectively
Solution Approach 1:
The plasma cleaning capability is extended from the central region to the peripheral region by adding an inductive plasma source that operates in a different spatial dimension. The inductive coil is positioned to generate plasma specifically in the peripheral region, complementing the central capacitive plasma source.
Solution Approach 2:
The dual plasma source system provides universal cleaning capability across the entire chamber - the capacitive source handles central region cleaning while the inductive source handles peripheral region cleaning, making the system universally effective for all chamber surfaces.
3Reliability
If extended cleaning time is used to clean peripheral chamber hardware, then cleaning completeness is improved, but manufacturing throughput decreases
Solution Approach 1:
The cleaning function is segmented into two simultaneous operations: central region cleaning by capacitive plasma and peripheral region cleaning by inductive plasma. This parallel segmentation eliminates the need for extended sequential cleaning time, maintaining both completeness and throughput.
Solution Approach 2:
The dual plasma source system enables continuous and simultaneous cleaning of both central and peripheral regions throughout the chamber, maximizing cleaning efficiency without requiring extended time periods. Both regions are cleaned concurrently rather than sequentially.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution extends the lifetime of electrostatic chucks, improves substrate yield, and increases manufacturing throughput by effectively cleaning peripheral chamber hardware and maintaining plasma uniformity across the substrate surface.
Implementation Method 1
an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber
Implementation Method 2
a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode
Data Source
AI summary
Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode.


