Electric Discharge Tubes TRIZ Cases

A plasma processing focus ring uses a dielectric constant varying device to adjust the electric field distribution across the substrate periphery.

A cold field emission electron source uses fixed emission sites formed by metal atoms reacting with gas molecules to lower the surface work function.

A phase detection circuit determines voltage and current phase differences using high-pass and low-pass filters.

A blanking aperture array device uses a laminated metal film structure to suppress electrostatic charge accumulation during multi-beam irradiation.

A charged particle beam apparatus uses a rotation member to adjust the detected azimuth angle of secondary particles.

A non-linear function corrects edge positions to eliminate uniformity loss from dose-dependent shifts.

Real-time ion beam current waveform analysis detects nonuniformities against baseline profiles, triggering interlock shutdowns or parameter adjustments.

A power supply system uses amplitude and voltage regulation to generate high-frequency signals for plasma processes.

A permanent magnetic lens array focuses charged particles using axially symmetric snorkel cone protrusions and concentric magnet elements.

Bifurcated contact arms extend in opposite directions from a common connecting portion, reducing horizontal width and increasing contact density.

A dosimetry device uses two ionization chambers with different charge collection efficiency factors to calculate dose rates.

Integrating an elastic contacting arm into the grounding terminal provides detection capability while reducing manufacturing complexity and power consumption.

Segments exposure into multiple passes with intervals to reduce heat damage and improve manufacturing precision.

An anodized coating on the showerhead edge manages RF return paths, reducing arcing and increasing deposition rates.

A tapered joining portion connects adjacent opening patterns on an electron beam exposure mask to enable overlapping irradiation.

Aromatic precursors polymerize into graphene hard mask films on semiconductor substrates at temperatures below 600°C.

Unit cells with avalanche diodes and memories store multiple frames to eliminate signal reading delays during electron beam detection.

An insulating guide member bonds via adhesive to a conductive substrate, eliminating screw insertion that reduces rigidity and complicates assembly.

An electrostatic multipole device individually controls these beamlets to resolve the contradiction between high inspection throughput and complex beam control.

Outer diameter resin layer reduces distortion and peeling while maintaining environmental resistance and optical performance.

A proportional thermal fluid delivery system adjusts flow rates via a valve to maintain steady-state wafer temperatures under high RF power conditions.

Support hardware isolates cabled module pulling forces from the connector via independent beams, preventing structural damage.

Stationary electret electrodes enable free substrate vibration for energy harvesting, eliminating wiring that impedes motion and causes aged deterioration.

Analyzing chamber instability at nominal frequencies enables dynamic adjustment to minimize non-uniform etch results across processed layers.

A gas avalanche detector positions its admission window between the intermediate and collector electrodes to optimize charge pickup efficiency.

Synchronized RF pulses alternate bias power to remove by-products during etching, maintaining line integrity in high aspect ratio structures.

A conductive choke portion attenuates microwave propagation through an insulating tubular portion in a plasma processing apparatus.

Localized chemical etching using electron beam generated radicals enables precise defect exposure and material deposition on integrated circuits.

A charged particle beam generation apparatus controls linear accelerator operation periods to stabilize beam injection into circular accelerators.

Alkaline chemicals dissolve plasma-resistant masks from semiconductor wafers, suppressing ashing failures and protecting sensitive CMOS components.

An RF circuit tunes amplitude and phase to control the plasma sheath at the substrate edge.

A dual laser beam system prepares surfaces for focused ion beam cross-sectioning.

Reinforcing beads on a crank bracket absorb bending forces at the joint between the male terminal portion and the bracket to prevent breakage.

Periodic high frequency power pulsing suppresses electron temperature to prevent dielectric breakdown during plasma processing step transitions.

A conductive shield electrode between suppressor and extraction electrode stabilizes electron beam emission.

Segmented heating units with reflection members control temperature distribution across the dielectric plate to resolve center-edge thermal gradients.

An inductive coil generates secondary plasma outside the substrate area to clean peripheral chamber hardware without damaging the electrostatic chuck.

A plasma processing chamber uses a pulsed bias power system to control ion flux and charge balance during etching.

A high-voltage power supply system applies potentials across multiple current paths to accelerate ions within a single ion implantation apparatus.

A resist pitch splitting method creates dense patterns using conformal spacer deposition and reactive ion etching.

A TWTS-EMMP pulser imposes transverse deflection on electron beams to generate pulses.

A metal film on a flow control ring adjusts plasma distribution to maintain uniform film thickness and reduce purging time.

Mixing upstream and downstream ion beam current measurements to infer the actual beam current at the final optical bend.

Segmented ground and power conductors guide electromagnetic waves to scatter interference, resolving high-frequency crosstalk in signal lines.

A magnetic field generator exposes charged particle streams to a vector potential for phase synchronization.

Hydrogen peroxide co-gas decomposes into reactive radicals that oxidize atomic carbon deposits, preventing efficiency loss and extending ion source lifetime.

A directional plasma treatment modifies substrate surfaces using energetic particle beams to enhance feature density.

Suspended mask segments define dicing channels on wafers during plasma etching, eliminating costly laser mask steps.

Segmented dose computation corrects fogging and loading effects in lithography, maintaining line width uniformity.

Identical conductive tiles on a single plane eliminate manufacturing complexity and sensitivity compensation while improving spatial resolution.