Inductive Element Interrupter Region Eddy Current Confinement
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Inductive elements on semiconductor substrates generate eddy currents, which inversely proportional to the quality (Q) factor, leading to reduced performance, as existing technologies fail to effectively confine and minimize these currents.
Innovation Solution
Formation of interrupter layers with oppositely doped regions in an alternating pattern within the substrate, creating diodes to block eddy currents and confine them to smaller areas, thereby increasing substrate resistance and reducing eddy current losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If inductive elements are formed over semiconductor substrates, then inductive functionality is achieved, but eddy currents are generated in the substrate which reduce the Q factor and performance
Solution Approach 1:
The substrate is segmented into multiple regions with alternating conductivity types (n-type and p-type) arranged in a checkerboard pattern. This segmentation creates numerous small regions that individually confine eddy currents, preventing large-scale current loops and reducing overall eddy current losses in the substrate.
Solution Approach 2:
Different regions of the substrate are doped with different conductivity types (n-type or p-type) to create local variations in electrical properties. These localized doped regions with alternating conductivity patterns create diode-like structures that selectively block eddy current paths, improving performance by addressing the eddy current problem locally rather than uniformly across the entire substrate.
2Reliability
If interrupter layers with oppositely doped regions are formed in the substrate, then eddy currents are confined to smaller areas and Q factor is enhanced, but device structure and manufacturing process become more complex
Solution Approach 1:
The interrupter layer is segmented into multiple small doped regions arranged in a checkerboard pattern, dividing the substrate into numerous small zones. This segmentation confines eddy currents to individual small regions rather than allowing large current loops, thereby enhancing the Q factor through reduced eddy current losses.
Solution Approach 2:
The interrupter layer combines multiple doped regions of alternating conductivity types within a single layer structure. By merging n-type and p-type doped regions in an alternating pattern within the same layer, the design achieves eddy current confinement without requiring multiple separate layers, thus reducing structural complexity.
3Loss of energy
If interrupter layers are formed to block eddy currents, then eddy current losses are reduced, but manufacturing process steps increase
Solution Approach 1:
The alternating n-type and p-type doped regions are formed in advance during substrate preparation, before the inductive element is constructed. This preliminary doping creates the interrupter layer structure that will subsequently block eddy currents, allowing the eddy current mitigation function to be built into the substrate itself rather than added as a separate post-processing step.
Solution Approach 2:
The substrate structure itself provides the eddy current blocking function through its alternating doped regions, eliminating the need for separate interrupter layers or additional manufacturing steps. The substrate serves dual purposes: providing mechanical support and actively confining eddy currents through its intrinsic doped region pattern, thereby simplifying the overall manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the Q factor of inductive elements by confining eddy currents to smaller regions, reducing losses and improving inductive performance.
Implementation Method 1
Inductive elements formed over semiconductor substrates result in the formation of eddy currents within the substrate
Implementation Method 2
Formation of interrupter layers with oppositely doped regions in an alternating pattern within the substrate, creating diodes to block eddy currents
Implementation Method 3
Inductive elements formed over semiconductor substrates result in the formation of eddy currents within the substrate
Data Source
AI summary
A semiconductor device structure a semiconductor substrate having a first conductivity type and a top surface. A plurality of first doped regions is at a first depth below the top surface arranged in a checkerboard fashion. The first doped regions are of a second conductivity type. A dielectric layer is over the top surface. An inductive element is over the dielectric layer, wherein the inductive element is over the first doped regions.