Inductive Load Driver Circuit for Fast Magnetic Energy Dissipation

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Solution Overview

Problem

Existing circuit arrangements for driving inductive loads, such as those in motor vehicles, require multiple connections and complex wiring to efficiently dissipate magnetic energy, which increases complexity and wiring harness requirements.

Innovation Solution

A circuit arrangement utilizing a series connection of a reverse-biased zener diode and a forward-biased diode between the drain and gate terminals of a MOS field effect transistor, along with an AND circuit controlling both transistors, allows for quick dissipation of magnetic energy using only one connection to the inductive load and few power switching elements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a freewheeling diode is used for dissipation of magnetic energy, then the circuit design remains simple with few components, but the dissipation process takes an undesirably long time

Engineering Contradiction:
Improvecircuit complexityVSAvoidmagnetic energy dissipation speed
Core Design Contradiction:
Device complexityVSSpeed

Solution Approach 1:

The patent changes the voltage parameter dynamically by introducing a second supply voltage source with higher voltage than the first. During the dissipation phase, this higher voltage is applied to the inductive load, which increases the rate of magnetic energy dissipation. This parameter change allows fast dissipation without requiring complex additional circuitry, thus resolving the contradiction between simple design and fast dissipation.

Inventive Principle:
Principle #35Parameter changes

2Speed

If multiple MOS field effect transistors and supply voltage sources are used to enable fast dissipation of magnetic energy, then the dissipation speed increases, but the number of components and wiring complexity increases

Engineering Contradiction:
Improvemagnetic energy dissipation speedVSAvoidnumber of components and connections
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The first MOS field effect transistor serves multiple functions: it acts as a switch during the current buildup phase and also functions as a switch during the dissipation phase when controlled by the second control signal. This multi-functionality allows the circuit to achieve fast dissipation using the same transistor that is already present, avoiding the need for additional power switching elements and reducing overall circuit complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Device complexity

If the inductive load is connected with one connection only, then the wiring harness requirements are reduced, but the ability to quickly dissipate magnetic energy is compromised

Engineering Contradiction:
Improvewiring harness complexityVSAvoidmagnetic energy dissipation speed
Core Design Contradiction:
Device complexityVSSpeed

Solution Approach 1:

The patent introduces a temporal dimension to the voltage application by using different supply voltage sources at different time phases. During the dissipation phase, the higher second supply voltage is applied to the inductive load through the same single connection, effectively adding a voltage dimension that enables fast dissipation without requiring additional physical connections or wiring complexity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables rapid dissipation of magnetic energy in the inductive load by utilizing the freewheeling diode during the hold phase and the zener diode during turn-off, reducing the number of components and connections needed while maintaining efficient energy discharge.

Implementation Method 1

a series connection comprising at least one reverse-biased zener diode and a forward-biased diode connected up between them

Methodology Applied
Scientific EffectZener breakdown: Avalanche Breakdown

Implementation Method 2

a series connection comprising at least one reverse-biased zener diode and a forward-biased diode connected up between them

Methodology Applied
Scientific EffectDiode rectification: Diode

Implementation Method 3

the magnetic energy stored in the inductive load dissipates as a result of an induced flow of current via the freewheeling diode

Methodology Applied
Scientific EffectElectromagnetic induction: Electromagnetic Induction

Implementation Method 4

the final dissipation of the magnetic energy stored in the inductive load is possible only by means of a flow of current via the freewheeling diode with its low forward voltage

Methodology Applied
Scientific EffectDiode forward conduction: Diode

Data Source

PatentUS10566967B2Circuit arrangement for driving an inductive load
Publication Date: 2020.02.18 VITESCO TECHNOLOGIES GMBH
  • US10566967B2 patent drawing
  • US10566967B2 patent drawing
  • US10566967B2 patent drawing

AI summary

A circuit arrangement for driving an inductive load is connectable to a load terminal. A first MOS field effect transistor is connected between a terminal for a high potential of a first supply voltage source and the load terminal. A series connection with a freewheeling diode and a second MOS field effect transistor has its freewheeling diode connected between the load terminal and a second terminal for a low potential of the first supply voltage source. The freewheeling diode has its cathode connected to the load terminal. A series connection with a reverse-biased zener diode and a forward-biased diode is connected between the drain and gate terminals of the first MOS field effect transistor. A first control signal terminal is connected to the gate terminal of the second MOS field effect transistor and via an AND circuit to the gate terminal of the first MOS field effect transistor.