Infrared Spectroscopy for Etching Residue Detection in Array Substrates
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Solution Overview
Problem
In the production of array substrates, incomplete etching during the patterning process leads to etching residues, causing structural changes and degraded products, particularly in the formation of n+ amorphous silicon layers and via holes in protective layers.
Innovation Solution
A method utilizing infrared spectroscopy, specifically with a Fourier transform infrared spectrometer, to detect etching residues by analyzing infrared spectrograms for characteristic peaks indicating the presence of functional groups or chemical bonds, thereby determining if residues are present.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional etching processes are used to remove n+ amorphous silicon and protective layer materials, then the patterning process can be completed, but etching residues remain causing structural changes and degraded products
Solution Approach 1:
The patent implements a feedback mechanism by detecting etching residues through infrared spectroscopy and using this information to evaluate etching quality. The detection system provides real-time feedback on whether etching is complete, allowing for process optimization and quality control to ensure full removal of residues while maintaining productivity.
Solution Approach 2:
The patent replaces conventional mechanical/chemical etching evaluation methods with infrared spectroscopy detection. This substitution allows for non-contact, precise detection of etching residue presence through characteristic infrared absorption peaks, enabling accurate assessment of etching completeness without interfering with the etching process itself.
2Reliability
If etching processes are performed to form via holes in protective layers, then connectivity between electrodes can be achieved, but incomplete etching causes connectivity failures
Solution Approach 1:
The patent uses infrared spectroscopy to provide feedback on via hole etching completeness by detecting characteristic peaks of residual protective layer materials. This feedback mechanism ensures that etching is fully completed to achieve reliable electrode connectivity while preventing connectivity failures caused by incomplete etching.
Solution Approach 2:
The patent substitutes conventional visual or physical inspection methods with infrared spectroscopy to detect via hole etching quality. The spectroscopy method provides precise, non-contact detection of residual materials at via holes, enabling accurate verification of connectivity formation without mechanical interference.
3Measurement precision
If infrared spectroscopy is used to detect etching residues, then detection accuracy is improved, but additional detection equipment and process steps are required
Solution Approach 1:
The patent applies infrared spectroscopy, which can be integrated into existing semiconductor manufacturing equipment, to serve multiple functions: detecting etching residue presence, evaluating etching quality, and ensuring process compliance. This multi-functionality justifies the addition of detection capability while avoiding the need for multiple separate inspection systems.
Solution Approach 2:
The patent replaces complex mechanical inspection systems with infrared spectroscopy-based detection. The spectroscopy method provides high measurement precision for residue detection while requiring minimal additional equipment, as it can be implemented through optical detection systems that integrate with existing manufacturing lines.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively identifies etching residues, improving product yield by ensuring complete etching processes and preventing connectivity issues between electrodes.
Implementation Method 1
testing the pattern in the position to be detected by an infrared spectroscopy, and obtaining an infrared spectrogram
Implementation Method 2
testing the pattern in the position to be detected by the infrared spectroscopy using a Fourier transform infrared spectrometer
Data Source
AI summary
The embodiments of the present invention provide a method for detecting an etching residue and relate to the field of display technologies, with the purpose of detecting an etching residue so as to improve product yield. The method comprises: fitting the boundary of a pattern in a position to be detected by film color difference, and positioning the pattern in a position to be detected, thereby acquiring the pattern in a position to be detected; testing an infrared spectrum of the pattern in a position to be detected, and obtaining an infrared spectrogram; determining whether the residue exists according to the infrared spectrogram. The method of the invention may be applicable for the detection of an etching residue during the process of preparing an array substrate or a cell substrate.