InGaN LED Subpixel Structure for Higher Red Quantum Efficiency
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Solution Overview
Problem
Current semiconductor processing methods face challenges in producing high-quality semiconductor structures with uniform quantum efficiency across different-colored subpixels, leading to inefficiencies in light emission and subpixel crosstalk in indium-gallium-nitrogen-containing LEDs.
Innovation Solution
The method involves forming porosified and unporosified gallium-and-nitrogen-containing regions on a semiconductor substrate, with selective porosification and the use of v-pits in active regions to enhance quantum efficiency, and the application of reflection layers tailored to specific peak light emission wavelengths to increase useful light extraction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If selective porosification is applied to gallium-and-nitrogen-containing regions, then quantum efficiency is improved for specific wavelength regions, but manufacturing complexity increases due to selective processing requirements
Solution Approach 1:
The patent applies porosification selectively to specific gallium-and-nitrogen-containing regions based on their intended wavelength emission characteristics. Regions requiring enhanced quantum efficiency for red or green wavelengths are porosified, while blue wavelength regions maintain their original structure. This local differentiation resolves the contradiction by tailoring the structural properties to the specific functional requirements of each wavelength region.
Solution Approach 2:
The semiconductor structure is divided into distinct wavelength regions (red, green, blue) with different structural characteristics. The porosification process is segmented to affect only the regions requiring it, creating a multi-structured device where each segment is optimized for its specific wavelength range. This segmentation allows improved quantum efficiency where needed without unnecessarily complicating the entire manufacturing process.
2Illumination intensity
If reflection layers are added to enhance light extraction, then useful light output increases, but device complexity and manufacturing steps increase
Solution Approach 1:
Reflection layers are applied selectively to specific wavelength regions based on their light extraction requirements. The patent deposits reflection layers such as aluminum or copper on regions where they will most effectively enhance useful light output, rather than uniformly applying them across the entire device. This localized approach increases useful light extraction while minimizing the added complexity.
Solution Approach 2:
The patent modifies optical parameters by introducing reflection layers with specific reflectivity characteristics at different wavelength ranges. By changing the optical parameters of specific regions through selective reflection layer deposition, the device achieves enhanced useful light extraction efficiency without requiring a complete redesign of the entire structure.
3Reliability
If v-pits are formed in active regions, then quantum efficiency is enhanced for red-light emission, but manufacturing precision requirements increase
Solution Approach 1:
V-pits are formed locally in specific active regions where red-light emission is desired, rather than uniformly across all regions. This localized formation of v-pits allows the manufacturing process to focus precision efforts only where needed, reducing the overall manufacturing precision burden while still achieving the quantum efficiency enhancement in the target regions.
Solution Approach 2:
The v-pit formation is performed as a preliminary step before final active region deposition or activation. By preparing the substrate surface with v-pits in advance, subsequent manufacturing steps can proceed with standard precision requirements, as the critical quantum efficiency-enhancing feature has already been established in the preliminary processing stage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the quantum efficiency of semiconductor structures, reduces subpixel crosstalk, and enhances light emission by increasing the amount of usable light extracted from subpixels, particularly for red-light-emitting regions, while maintaining the efficiency of blue and green subpixels.
Implementation Method 1
The first gallium-and-nitrogen-containing region may be porosified
Implementation Method 2
increasing the amount of usable light extracted from subpixels
Implementation Method 3
forming a first reflection layer on the first, second, and third active regions... forming a second reflection layer over the first, second, and third active regions
Implementation Method 4
indium-gallium-nitride light emitting diodes... active region material may include an InGaN-containing material
Data Source
AI summary
Exemplary processing methods of forming a semiconductor structure may include forming a nucleation layer on a semiconductor substrate. The methods may further include forming first, second, and third, gallium-and-nitrogen-containing regions on the nucleation layer. The first gallium-and-nitrogen-containing region may be porosified, without porosifying the second and third gallium-and-nitrogen containing regions. The methods may still further include forming a first active region on the porosified first gallium-and-nitrogen-containing region, and a second active region on the unporosified second gallium-and-nitrogen-containing region. The methods may yet also include forming a third active region on the unporosified third gallium-and-nitrogen-containing region.