Semiconductor Devices TRIZ Cases

An angled connecting wall and insulation layer help micro LEDs prevent sacrificial layer breakage and bonding material diffusion during transfer.

Protrusions in the doped conductive layer and conductive bridges improve transverse carrier transfer while reducing parasitic light absorption.

A shallower relaxation layer linked to the P body eases electric field stress at trench ends and raises avalanche withstand voltage.

Different non-pyramidal textures on N-type and P-type back regions improve passivation, slurry contact, and solar cell efficiency.

Recessed dielectric filled with conductive material helps high-voltage CMOS devices limit punch-through and leakage while preserving bandwidth.

A segmented wavelength conversion layout improves LED color uniformity while preserving luminous flux through a surrounding light-transmissive region.

Graded JTE doping eases edge electric field concentration, preserving breakdown voltage while shortening the termination region and simplifying processing.

Two gate work function regions reshape the drain-side electric field in a vertical FET, cutting GIDL while preserving threshold control.

A passivation layer and protective conductive layer shield AMOLED metal pads from etching and oxidation, improving signal transmission reliability.

A conductive plate over passivation trenches reshapes the gate-drain electric field to cut leakage current and raise HEMT breakdown voltage.

Through-hole fixing spaces lock the molding unit into the lead frame, preventing reflow separation and protecting LED chips and wires.

Patterned transparent zones and chalcopyrite absorbers raise visible transmittance while preserving output and avoiding color filter effects.

A vertical single-transistor ferroelectric stack boosts memory density and speed while lowering voltage for DRAM replacement in AI chips.

High-reflectivity ceramic layers on a thermally conductive LED submount redirect trapped photons and improve heat dissipation.

Selective porosification and tailored reflection layers raise red InGaN LED quantum efficiency while reducing subpixel crosstalk.

Photon counts are stored and compared with memory-based thresholds to detect luminance changes in real time at the pixel level.

Light blue OLED emission, filtered into deep blue and paired with quantum dot red and green conversion, improves color gamut and eases large-area fabrication.

Floating conductive members and segmented insulation suppress field concentration, cutting on-resistance while preserving breakdown voltage.

An inclined source gate and penetrating channel raise source select transistor turn-on current while improving 3D semiconductor reliability.

A p-i-n doping profile extends the depletion region in infrared photodetectors, improving absorption and quantum efficiency in thin absorber layers.

A doped barrier region between the gate and drain lowers drain electric field, raising HEMT breakdown voltage without thick epitaxial layers.

Stepped outer peripheral regions and a buried p+ ring spread edge electric fields in SiC, improving breakdown voltage reliability with simpler doping depth control.

A wraparound base contact in a lateral bipolar transistor cuts base resistance, eases current crowding, and supports high-speed RF operation.

Stepped p-type peripheral regions with tuned impurity levels suppress electric field concentration and keep SiC breakdown voltage stable.

A low-k dielectric gap cuts capacitance in vertically stacked ferroelectric memory cells, enabling faster operation and scalable 3D arrays.

A segmented recess wall and lowered reflective member reduce back reflection and increase direct light emission from the LED.

A shared ferroelectric layer lets two Fe-FETs form a compact differential memory pair, cutting area and simplifying single-operation read/write.

Segmented SiC mesas and trench gates raise channel width density while protecting gate insulator dielectric integrity under high electric fields.

A split field termination layout blocks space charge spread between adjacent power devices and the die edge while reducing die area.

A ring body, regulation holes, and a spheroidal resin lens improve LED optical-axis alignment for higher forward intensity and narrower light spread.

Varying gate insulator composition across two portions removes interface traps, reducing transistor degradation and display afterimages.

A groove-set reflective layer and side-covering transmissive layer boost LED lateral light extraction while improving light distribution and color uniformity.

A thin oxide under a silicon nitride hard mask enables controlled dry and HF wet etching, protecting silicon and preserving Ge critical dimensions.

A lateral SACM photodetector uses a charge layer and expanded absorption contact to boost avalanche gain while maintaining sensitivity at higher reverse bias.

A fin-based embedded storage structure combines logic and DRAM functions on one chip to simplify packaging and lower fabrication cost.

Electrodes on a gate-drain insulating layer attract and neutralize trapped electrons, preventing current collapse in III-V HEMTs.

An insulating trench in the SiC RF MOSFET JFET region lowers electric field stress and capacitance to protect the gate dielectric.

Varying the thickness of a doped group III-V layer reshapes capacitance, evens the electric field, and raises breakdown voltage.

Wet etching forms LDMOS trenches with (111) sidewalls and a (100) bottom to stabilize trench angles, lower on-resistance, and improve isolation.

Spatially isolated gate conductors in an LDMOS cut gate-drain overlap, lowering gate charge while preserving voltage withstanding capability.

A silicon-rich tensile stress layer diffuses silicon into a III-V barrier during annealing, boosting 2DEG density and lowering on-resistance.

Sequential barrier-layer patterning and spacer formation improve HEMT gate precision, reduce micro loading, and strengthen device reliability.

A single anneal forms different gate and source/drain silicide compositions in III-V semiconductors, cutting process complexity and yield loss.

Different trench surface dimensions tune RGB emission in one epitaxial LED structure, cutting size, cost, and phosphor-related reliability issues.

An AlN-substrate vertical UV LED uses rear n-electrode openings to improve light extraction, uniform emission, and lower operating voltage.

A dedicated roughening layer on the contact layer improves LED light coupling while reducing absorption and manufacturing complexity.

MBE-grown ScxAl1-xN-GaN heterostructures cut defects and impurities while preserving room-temperature ferroelectric switching for FeFETs.

Grooved transfer and preliminary areas enable reusable micro-LED placement with better alignment, fewer repair steps, and higher display yield.

A single epitaxial growth pass forms HBT subcollector, base, and emitter regions, cutting mask steps, cost, and fabrication complexity.

Divots in the trench isolation region hold silicon oxide to block high-k residue encroachment and improve ONO etch precision and memory reliability.