Semiconductor Electrode Layout With Floating Conductive Members
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high breakdown voltage and low on-resistance due to limitations in electrode design and insulating member configurations, which affect the efficiency and reliability of transistor operations.
Innovation Solution
The semiconductor device incorporates a specific electrode and conductive member configuration, including a first and second conductive member with floating potentials, and an insulating member arrangement that enhances capacitance and reduces on-resistance by strategically positioning and sizing these components to suppress electric field concentration and maintain high breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the width of operation regions is minimized to improve device integration, then device density increases, but on-resistance increases and breakdown voltage decreases
Solution Approach 1:
The device is divided into multiple operation regions (first and second operation regions) with separate conductive members (first and second conductive members) controlling each region independently. This segmentation allows each region to be optimized for breakdown voltage while maintaining overall device density through minimized total width.
Solution Approach 2:
Different conductive members are positioned at different locations to control different operation regions with different characteristics. The first conductive member controls the first operation region while the second conductive member controls the second operation region, allowing local optimization of breakdown voltage in each region despite minimized overall width.
2Area of moving object
If the width of operation regions is minimized to improve device integration, then device density increases, but on-resistance increases
Solution Approach 1:
The current path is divided into multiple parallel conduction paths through separate operation regions, each controlled by its own conductive member. This segmentation reduces the overall on-resistance by providing multiple parallel conduction channels despite the minimized width of individual operation regions.
Solution Approach 2:
Multiple operation regions are combined in parallel between the same source and drain electrodes, creating multiple conduction paths. The first and second operation regions work simultaneously to conduct current, reducing total on-resistance while maintaining minimized operation region widths for high device density.
3Device complexity
If conventional electrode and insulating member configurations are used, then device structure is simple, but breakdown voltage and on-resistance characteristics are insufficient
Solution Approach 1:
The insulating member is divided into multiple regions (first insulating region, second insulating region, third insulating region) that are positioned between different conductive members and operation regions. This segmented insulating structure enables independent control of electrical fields in different regions, achieving high breakdown voltage while maintaining manageable device complexity.
Solution Approach 2:
The insulating member acts as an intermediary between conductive members and operation regions, providing electrical isolation and field control. The strategically positioned insulating regions mediate the electrical interaction between conductive members and semiconductor regions, enabling high breakdown voltage characteristics while maintaining a structured and organized device configuration.
4Device complexity
If conventional electrode and insulating member configurations are used, then device structure is simple, but on-resistance characteristics are insufficient
Solution Approach 1:
The conductive members are segmented into multiple independent elements (first and second conductive members) that can be independently positioned and sized to optimize conduction paths. This segmentation allows each conductive member to be optimized for minimizing on-resistance in its respective operation region, achieving low overall on-resistance while maintaining a structured device configuration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces on-resistance and maintains high breakdown voltage, even when the width of operation regions is minimized, thereby improving the overall performance and efficiency of the semiconductor device.
Implementation Method 1
The first insulating member includes a first insulating region, a second insulating region, and a third insulating region. At least a portion of the second insulating region is between the first conductive member and the semiconductor member.
Implementation Method 2
a first and second conductive member with floating potentials, and an insulating member arrangement that enhances capacitance and reduces on-resistance by strategically positioning and sizing these components to suppress electric field concentration and maintain high breakdown voltage
Implementation Method 3
an insulating member arrangement that enhances capacitance and reduces on-resistance by strategically positioning and sizing these components
Data Source
AI summary
According to one embodiment, a semiconductor device includes first to third electrodes, first and second conductive members, a semiconductor member, and a first insulating member. The first conductive member is electrically connected with the second electrode or is electrically connectable with the second electrode. The semiconductor member includes first to third semiconductor regions. The first semiconductor region includes first to fourth partial regions. The third partial region is between the first and second partial regions. The second semiconductor region is between the third partial region and the third semiconductor region. The fourth partial region is between the third partial region and the second semiconductor region. At least a portion of the second semiconductor region is between the second conductive member and the third electrode. The second conductive member is electrically insulated from the second and third electrodes. The first insulating member includes first to third insulating regions.