Solar Cell Back-Surface Texturing for Passivation and Contact
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Solution Overview
Problem
Existing textured surface structures on solar cells can adversely affect subsequent film passivation and slurry contact interfaces, leading to performance issues in photovoltaic cells.
Innovation Solution
A semiconductor substrate with N-type and P-type conductive regions featuring non-pyramidal texture structures of specific sizes and shapes, designed to facilitate better film passivation and slurry contact, enhancing the solar cell's performance by optimizing the one-dimensional size and arrangement of these textures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a textured surface structure is adopted to increase light transport paths, then light utilization is improved, but film passivation and slurry contact interfaces are adversely affected
Solution Approach 1:
The back surface is segmented into multiple conductive regions (N-type and P-type) with different texture structures, allowing each region to be optimized independently for its specific function while maintaining overall system performance
Solution Approach 2:
Different texture structures are applied to different conductive regions based on their specific requirements: smaller textures (5-12μm) for N-type regions requiring good passivation, and larger textures (10-40μm) for P-type regions requiring good slurry contact
2Use of energy by moving object
If a textured surface structure is adopted to increase light transport paths, then light utilization is improved, but slurry contact interface is adversely affected
Solution Approach 1:
The back surface is segmented into multiple conductive regions (N-type and P-type) with different texture structures, allowing each region to be optimized independently for its specific function while maintaining overall system performance
Solution Approach 2:
Different texture structures are applied to different conductive regions based on their specific requirements: smaller textures (5-12μm) for N-type regions requiring good passivation, and larger textures (10-40μm) for P-type regions requiring good slurry contact
3Ease of manufacture
If uniform texture structures are used on all conductive regions, then manufacturing is simplified, but performance is compromised due to different regional requirements
Solution Approach 1:
The back surface is segmented into multiple conductive regions (N-type and P-type) with different texture structures, allowing each region to be optimized independently for its specific function while maintaining overall system performance
Solution Approach 2:
Different texture structures are applied to different conductive regions based on their specific requirements: smaller textures (5-12μm) for N-type regions requiring good passivation, and larger textures (10-40μm) for P-type regions requiring good slurry contact
Data Source
Figure 1
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Figure 3~4
AI summary
A semiconductor substrate, including a back surface having N-type conductive regions and P-type conductive regions. The N-type conductive regions are provided with first non-pyramidal texture structures, and the P-type conductive regions are provided with second non-pyramidal texture structures. A top surface of the first non-pyramidal texture structure is a polygonal plane, and a top surface of the second non-pyramidal texture structure is a polygonal plane. A one-dimensional size of the top surface of the first non-pyramidal texture structure is less than a one-dimensional size of the top surface of the second non-pyramidal texture structure. The one-dimensional size of the top surface of the first non-pyramidal texture structure is in a range of 5 µm to 12 µm. The one-dimensional size of the top surface of the second non-pyramidal texture structure is in a range of 10 µm to 40 µm.