Inkjet Printed Color Filter TFT Fabrication
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Solution Overview
Problem
The conventional method for fabricating a color filter layer on a TFT array substrate in LCD panels is complex and costly, requiring multiple photolithography and etching processes, which increases the cost of masks and material usage.
Innovation Solution
A method that simultaneously forms the channel, source, and drain layers through a single photolithography and etching process, followed by integrating a color filter layer using an inkjet printing process, reducing the number of photolithography steps and simplifying the process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple photolithography and etching processes are used to form the color filter layer, then the color filter layer can be formed with precise patterns, but the fabricating cost and process complexity increase significantly
Solution Approach 1:
The patent combines the formation of the color filter layer with the formation of the TFT structure by simultaneously patterning both the color filter and the transistor components (gate, channel, source, drain) in a single photolithography and etching process, eliminating the need for separate photolithography steps for the color filter layer
2Manufacturing precision
If multiple photolithography and etching processes are used to form the color filter layer, then the color filter layer can be formed with precise patterns, but the fabricating cost increases due to multiple masks and materials
Solution Approach 1:
The patent merges the color filter formation process with the TFT fabrication process, using a single photolithography mask and etching process to define both the color filter patterns and the transistor structures, thereby reducing mask costs and material consumption
Solution Approach 2:
The photolithography and etching process serves multiple functions simultaneously: it forms the color filter layer, defines the TFT structure (gate, channel, source, drain), and creates the necessary pattern alignment, making the process multi-functional and reducing overall fabrication steps
3Manufacturing precision
If multiple photolithography processes are used, then the color filter layer can be formed, but the production yield decreases due to increased defects from multiple processing steps
Solution Approach 1:
The patent combines color filter formation with TFT fabrication into a single photolithography and etching step, reducing the total number of processing steps and thereby minimizing the accumulation of defects that would occur with multiple sequential processes
Data Source
AI summary
A pixel structure fabricating method is provided. A gate is formed on a substrate. A gate insulation layer covering the gate is formed on the substrate. A channel layer, a source, and a drain are simultaneously formed on the gate insulation layer above the gate. The gate, channel layer, source, and drain form a thin film transistor (TFT). A passivation layer is formed on the TFT and the gate insulation layer. A black matrix is formed on the passivation layer. The black matrix has a contact opening above the drain and a color filter containing opening. A color filer layer is formed within the color filter containing opening through inkjet printing. A dielectric layer is formed on the black matrix and the color filter layer. The dielectric layer and the passivation layer are patterned to expose the drain. A pixel electrode electrically connected to the drain is formed.