In-line Semiconductor Metrology System for Real-Time Process Control
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Solution Overview
Problem
Current metrology systems for semiconductor manufacturing lack a unified solution to predict end-of-line performance of semiconductor devices based on a combination of optical properties and process variables, limiting their ability to control device structure and performance effectively.
Innovation Solution
A metrology system that includes an optical source, sensor, and processing module to measure and analyze optical properties such as band gap, thickness, and surface roughness of semiconductor materials during deposition and anneal processes, using spectrophotometers, ellipsometers, and quantum efficiency measurements, with a feedback control loop to adjust processes and predict device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple separate measurement tools (spectrophotometers, ellipsometers) are used to measure different optical properties, then measurement capability is improved, but system complexity increases
Solution Approach 1:
The patent combines multiple measurement functions (spectrophotometry, ellipsometry, quantum efficiency measurement) into a single integrated metrology system. The system uses a common optical path and sensor platform to perform multiple types of measurements, eliminating the need for separate instruments and reducing system complexity while maintaining comprehensive measurement capability.
Solution Approach 2:
The metrology system is designed with universal measurement capabilities that can measure multiple optical properties (absorption, reflection, band-gap, thickness) using a single instrument platform. The system can adapt its measurement mode and analysis algorithm based on the specific property being measured, providing multi-functionality without requiring multiple specialized tools.
2Manufacturing precision
If real-time optical measurements are implemented during deposition and anneal processes, then manufacturing precision is improved, but measurement and analysis complexity increases
Solution Approach 1:
The system performs preliminary measurements during the deposition and anneal processes to predict final device performance before the manufacturing cycle completes. By measuring optical properties in real-time and using predictive algorithms, the system can anticipate outcomes and provide feedback for process adjustment, simplifying the overall measurement and control complexity.
Solution Approach 2:
The metrology system implements feedback control by continuously measuring optical properties during deposition and anneal processes, comparing measurements against target values, and providing real-time feedback to adjust process parameters. This closed-loop approach improves manufacturing precision while automating the measurement and analysis complexity through algorithmic control.
3Measurement precision
If comprehensive optical property measurements (band gap, thickness, surface roughness) are performed, then device performance prediction accuracy is improved, but measurement time increases
Solution Approach 1:
The system performs measurements continuously during the deposition and anneal processes rather than as separate discrete steps. By integrating measurements into the existing manufacturing workflow and using real-time optical monitoring, the system obtains comprehensive data (band gap, thickness, surface roughness) without adding significant measurement time, maintaining continuous productive action.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise control of semiconductor device performance by correlating optical properties with process variables, improving junction formation, layer thickness control, and overall device quality, leading to enhanced manufacturing consistency and increased throughput.
Implementation Method 1
an optical source for generating an optical radiation to illuminate a portion of the semiconductor material
Implementation Method 2
measuring the absorption, or reflection of the optical radiation in the semiconductor material
Implementation Method 3
measuring the absorption, or reflection of the optical radiation in the semiconductor material
Data Source
AI summary
A metrology system for gauging and spatially mapping a semiconductor material on a substrate can be used in controlling deposition and thermal activation processes.


