Insulated Source/Drain Jumper Structure for FinFET Gap Isolation
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Solution Overview
Problem
As semiconductor devices are scaled down, the gap between the gate of a transistor and the contact formed on the source/drain becomes increasingly challenging, affecting integration density and reliability.
Innovation Solution
Incorporating an insulator on the substrate with specific fin patterns and gate structures, separated by an insulating layer, to create a semiconductor device with improved integration density and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are scaled down to increase integration density, then the gap between gate and source/drain contact is reduced, but reliability deteriorates due to increased risk of short circuits
Solution Approach 1:
The gate structure is segmented into first and second gate structures separated by an insulator, creating distinct electrical zones. This segmentation allows independent control and prevents unwanted electrical interaction between adjacent transistor components, thereby maintaining reliability while enabling closer spacing for higher integration density.
Solution Approach 2:
An insulator is introduced as an intermediary element between the first and second gate structures. This insulator acts as a mediator that prevents direct electrical contact between the gates and source/drain regions, eliminating short circuit risks while allowing the structures to be positioned closer together for improved integration density.
2Reliability
If gate structures are separated by an insulator to prevent short circuits, then reliability is improved, but device complexity increases
Solution Approach 1:
The insulator serves multiple functions simultaneously: it provides electrical insulation between gate structures, acts as a spacer to maintain proper spacing, and facilitates the formation of source/drain regions. This multi-functionality reduces the need for additional separate components, thereby limiting the increase in device complexity while achieving improved reliability.
3Productivity
If the gap between gate and source/drain contact is reduced to increase integration density, then productivity is improved, but manufacturing precision requirements increase
Solution Approach 1:
The insulator is formed in advance before the gate structures are positioned, establishing a predetermined spacing template. This preliminary action defines the exact gap dimensions between gate structures and source/drain regions, thereby reducing the precision requirements for subsequent manufacturing steps while enabling higher integration density.
Data Source
AI summary
A semiconductor device includes an insulator on a substrate and having opposite first and second sides that each extend along a first direction, a first fin pattern extending from a third side of the insulator along the first direction, a second fin pattern extending from a fourth side of the insulator along the first direction, and a first gate structure extending from the first side of the insulator along a second direction transverse to the first direction. The device further includes a second gate structure extending from the second side of the insulator along the second direction, a third fin pattern overlapped by the first gate structure, spaced apart from the first side of the insulator, and extending along the first direction, and a fourth fin pattern which overlaps the second gate structure, is spaced apart from the second side, and extends in the direction in which the second side extends. An upper surface of the insulator is higher than an upper surface of the first fin pattern and an upper surface of the second fin pattern.