Insulating Layer Conductor Layout for Higher Withstand Voltage
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Solution Overview
Problem
The concentration of electric fields on high voltage conductor patterns in electronic components leads to reduced withstand voltage, posing a challenge in improving dielectric breakdown strength.
Innovation Solution
Incorporating a withstand voltage enhancement structure of conductive property within the insulating layer, which protrudes further than the low voltage conductor pattern, and forming electric field enhancement structures between high voltage and low voltage components to distribute and shield electric fields effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If a high voltage conductor pattern and low voltage conductor pattern are arranged to face each other across an insulating layer, then the electronic component can achieve compact design and efficient electrical connection, but electric field concentration occurs at the high voltage conductor pattern side which reduces withstand voltage
Solution Approach 1:
A withstand voltage enhancement structure of conductive property is introduced as an intermediary element between the high voltage conductor pattern and low voltage conductor pattern. This structure protrudes further outside than the low voltage conductor pattern in plan view and is positioned to face the high voltage conductor pattern, serving as a mediator that redistributes the electric field and prevents direct concentration at the high voltage conductor pattern, thereby improving withstand voltage while maintaining compact dimensions
Solution Approach 2:
The withstand voltage enhancement structure is strategically positioned only at specific locations where electric field concentration is most severe - namely at the high voltage conductor pattern side and at pad regions. This localized enhancement approach addresses the electric field concentration problem precisely where it occurs without requiring overall enlargement of the component, thus maintaining compact size while improving reliability
2Reliability
If the withstand voltage enhancement structure protrudes further outside than the low voltage conductor pattern, then electric field concentration on the high voltage conductor pattern is relaxed, but the structural complexity increases
Solution Approach 1:
The withstand voltage enhancement structure is formed by merging conductive material with the existing insulating layer structure. The structure is embedded within the insulating layer while protruding at specific regions, combining the functions of insulation and electric field management in a single integrated feature, thereby reducing overall structural complexity compared to separate components
Solution Approach 2:
The withstand voltage enhancement structure serves multiple functions simultaneously: it acts as an electric field redistributor to improve withstand voltage, serves as part of the insulating layer structure, and provides structural support. This multi-functionality reduces the need for additional separate components, thereby minimizing structural complexity while achieving reliability improvement
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution relaxes electric field concentration on high voltage components, enhancing withstand voltage and dielectric breakdown strength, thereby improving the overall performance of electronic components.
Implementation Method 1
a withstand voltage enhancement structure of conductive property formed inside the insulating layer and along the high voltage conductor pattern such as to protrude further outside than the low voltage conductor pattern in plan view
Implementation Method 2
concentration of electric field on the high voltage conductor pattern is relaxed by the withstand voltage enhancement structure of conductive property
Data Source
AI summary
An electronic component includes an insulating layer, a low voltage conductor pattern formed inside the insulating layer, a high voltage conductor pattern formed inside the insulating layer such as to face the low voltage conductor pattern in an up/down direction, and a withstand voltage enhancement structure of conductive property formed inside the insulating layer and along the high voltage conductor pattern such as to protrude further outside than the low voltage conductor pattern in plan view.