Integrated Capacitor Device for Power Noise Reduction
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Solution Overview
Problem
In semiconductor devices, high processing speeds and dense element integration lead to parasitic inductance, causing electromagnetic interference (EMI) and power noise, which affects the reliability of products, and existing solutions are inadequate in effectively addressing these issues.
Innovation Solution
A capacitor device with multiple capacitances is designed, featuring a substrate with wells of different conductivity types and gate electrodes, along with conductive layers and impurity regions, to create various capacitances between these components, including junction capacitors and metal-insulator-metal (MIM) capacitors, which help stabilize power and reduce EMI.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a capacitor element is inserted to reduce EMI and power noise, then reliability is improved, but device complexity increases
Solution Approach 1:
The patent merges the capacitor element with the transistor structure by forming the capacitor using the same substrate, well regions, and gate electrode structures. The first capacitance is formed between the first well and second well, while the second capacitance is formed between the first well/second well and gate electrode, effectively combining multiple functional elements into a single integrated structure that reduces overall device complexity.
Solution Approach 2:
The gate electrode serves multiple functions: it acts as the control electrode for the transistor and simultaneously forms the second capacitance with the first well or second well. This multi-functionality eliminates the need for separate capacitor structures, thereby improving reliability while maintaining simple device architecture.
2Reliability
If additional components are added to stabilize power and reduce EMI, then reliability is improved, but manufacturing cost increases
Solution Approach 1:
The capacitor elements are formed using the same fabrication processes as the transistor, including well formation, oxidation, and gate electrode deposition. By merging the capacitor manufacturing steps with existing transistor fabrication workflows, the patent achieves power stabilization without requiring additional manufacturing processes or increasing production costs.
3Reliability
If high-k dielectric materials are used to increase capacitance, then power stabilization is improved, but manufacturing complexity increases
Solution Approach 1:
Instead of changing the dielectric material to high-k materials, the patent achieves increased capacitance by optimizing the geometric parameters of the existing silicon dioxide layer and well structures. The first capacitance between the first well and second well, and the second capacitance between the well and gate electrode, are enhanced through parameter optimization rather than material substitution, thereby maintaining manufacturing simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The capacitor device effectively stabilizes power and reduces EMI by creating multiple capacitances, enhancing the reliability of semiconductor devices without the need for additional components or high-k dielectric materials, thus improving integration and reducing manufacturing costs.
Implementation Method 1
a first capacitance and a second capacitance, the first capacitance being between the first well and the second well
Implementation Method 2
a gate electrode disposed on an upper portion of the first well or an upper portion of the second well such that the gate electrode is insulated from the first well or the second well
Implementation Method 3
The plurality of capacitances may include a first capacitance and a second capacitance, the first capacitance being between the first well and the second well, and the second capacitance being between the first well or the second well and the gate electrode
Data Source
AI summary
A capacitor device includes a substrate including a first well having a first conductivity type and a first voltage applied thereto and a second well having a second conductivity type and a second voltage applied thereto; and a gate electrode disposed on an upper portion of the first well or an upper portion of the second well in such a way that the gate electrode is insulated from the first well or the second well, wherein capacitances of the capacitor device include a first capacitance between the first well and the second well and a second capacitance between the first well or the second well and the gate electrode.