Integrated Circuit Sensor with Shared Gate Electrode
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Solution Overview
Problem
Existing sensor circuitry is large and complex, making it costly and difficult to produce, and there is a need for smaller and more efficient sensor solutions with reduced manufacturing steps.
Innovation Solution
An integrated circuit design that integrates a detection layer with a transistor and capacitor, where the capacitor gate electrode serves as both plates, eliminating the need for an additional capacitor plate and reducing manufacturing processes, with the capacitor second plate defined within the substrate, allowing for a single-layer production of the capacitor and transistor over the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional sensor circuitry with separate capacitor plates is used, then the capacitor can store charge effectively, but the circuitry size and complexity increase
Solution Approach 1:
The patent merges the transistor gate electrode and capacitor gate electrode into a single shared electrode structure. This consolidation eliminates the need for separate capacitor plates and reduces the number of manufacturing steps while maintaining effective charge storage capability through the shared gate structure that serves dual functions for both transistor control and capacitor charge storage.
Solution Approach 2:
The gate electrode is designed to perform multiple functions simultaneously: it serves as the control electrode for the transistor and as one of the capacitor plates for charge storage. This multi-functional design reduces component count and simplifies the overall sensor circuitry while maintaining both transistor switching capability and capacitor charge storage function.
2Manufacturing precision
If traditional multi-step manufacturing processes are used for sensor circuitry, then precise component formation is achieved, but production time and costs increase
Solution Approach 1:
The patent structures the manufacturing process so that the gate electrode is formed first with precise dimensional control, and subsequent components (source, drain, capacitor well) are formed in relation to this pre-established gate structure. This preliminary formation of the critical gate electrode ensures precise component alignment and dimensions while enabling subsequent steps to proceed more rapidly without compromising manufacturing precision.
Solution Approach 2:
The manufacturing process merges the formation of transistor and capacitor structures into a single integrated process flow. By forming both the transistor gate electrode and capacitor gate electrode simultaneously as a shared structure, the patent eliminates separate manufacturing steps for each component, thereby increasing production speed while maintaining precise component formation through the unified gate structure design.
3Area of stationary object
If smaller sensor circuitry is designed, then sensor size and cost are reduced, but manufacturing complexity may increase
Solution Approach 1:
The patent achieves compact sensor circuitry by merging the transistor and capacitor gate electrodes into a single shared structure. This consolidation dramatically reduces the area required for the sensor circuitry while simultaneously simplifying the manufacturing process by eliminating the need to form separate capacitor plates and reducing the number of lithography and etching steps required.
Solution Approach 2:
The patent utilizes vertical dimensionality by forming the capacitor well beneath the shared gate electrode structure. This three-dimensional arrangement allows the capacitor storage function to be achieved in the vertical direction rather than requiring additional lateral space, thereby reducing the overall footprint of the sensor circuitry while maintaining simple planar manufacturing processes.
Data Source
AI summary
Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a detection layer, a substrate, and a transistor having a transistor gate electrode, a transistor source, and a transistor drain. A capacitor gate electrode overlies the substrate, where the capacitor gate electrode and the transistor gate electrode are electrically connected with each other and with the detection layer. A capacitor well is defined within the substrate, and a gate insulator is positioned between the capacitor well and the capacitor gate electrode. A capacitor includes the capacitor gate electrode, the gate insulator, and the capacitor well.