Integrated Circuit TAP Cell Layout for Latch-Up Immunity

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Solution Overview

Problem

The placement of TAP cells in integrated circuits (ICs) during semiconductor manufacturing faces challenges such as process bottlenecks due to reduced lithography critical dimensions and mixed channel effects, particularly at advanced manufacturing nodes, which affect latch-up immunity and area utilization.

Innovation Solution

The placement of TAP cells in IC layouts involves arranging first TAP cells in rows and columns, with second TAP cells in elongated configurations across multiple columns, ensuring a specific relationship between fin features and cell dimensions to enhance latch-up immunity and reduce occupied area.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If TAP cells are placed using conventional methods at advanced manufacturing nodes, then latch-up immunity is compromised, but area utilization is reduced

Engineering Contradiction:
Improvelatch-up immunityVSAvoidarea occupied by TAP cells
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The TAP cell placement is segmented into two distinct types: first TAP cells arranged in regular rows and columns, and second TAP cells arranged in elongated configurations across multiple columns. This segmentation allows each type to serve specific functions - the first TAP cells provide baseline latch-up protection while the second TAP cells extend protection across wider areas with reduced area overhead, resolving the contradiction between reliability and area utilization.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent employs asymmetric placement strategies where first TAP cells use a conventional grid arrangement while second TAP cells use elongated configurations that span multiple columns. This asymmetric approach optimizes the balance between providing sufficient latch-up immunity through strategic placement and minimizing the total area occupied by TAP cells, particularly at advanced manufacturing nodes where area is premium.

Inventive Principle:
Principle #4Asymmetry

2Area of stationary object

If lithography critical dimensions are reduced for higher density, then manufacturing process complexity increases, but area utilization improves

Engineering Contradiction:
Improvearea utilizationVSAvoidprocess bottleneck
Core Design Contradiction:
Area of stationary objectVSEase of manufacture

Solution Approach 1:

The patent applies different placement qualities to different TAP cell types based on their functional requirements. First TAP cells use standard placement suitable for conventional lithography, while second TAP cells use elongated configurations that can be implemented with current lithography capabilities. This local quality approach ensures that area optimization does not force the use of reduced critical dimensions, thereby avoiding manufacturing process bottlenecks while still achieving improved area utilization.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS12408429B2Integrated circuit device and method
Publication Date: 2025.09.02 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12408429B2 patent drawing
  • US12408429B2 patent drawing
  • US12408429B2 patent drawing

AI summary

An integrated circuit (IC) device includes a plurality of first doped regions of a first semiconductor type over at least one first well region of the first semiconductor type, and a second doped region of a second semiconductor type over a second well region of the second semiconductor type. The second semiconductor type is different from the first semiconductor type. The plurality of first doped regions is arranged along a first direction. Each of the plurality of first doped regions has a first length in the first direction. The second doped region extends in the first direction between at least two first doped regions among the plurality of first doped regions over a second length greater than the first length.