Integrated Circuit Temperature Estimation Across Active Regions
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Solution Overview
Problem
Semiconductor devices experience temperature increases due to self-heating effects, which negatively impact performance and reliability, particularly in advanced process technologies like nanosheet super power rail devices, where these effects are exacerbated.
Innovation Solution
A method for estimating temperature information in integrated circuits by considering the heat propagation and distribution among polysilicon fingers within active regions, including extension regions beyond the immediate segment boundaries, using weighted average temperature calculations that account for the heat contribution of neighboring fingers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If traditional temperature estimation methods are used that only consider conductors within immediate segment boundaries, then the calculation complexity is low, but the temperature estimation accuracy is insufficient
Solution Approach 1:
The active region is divided into multiple segments, and temperature estimation is performed for each segment by considering conductors within extended regions that span multiple segments. This segmentation approach allows the complex problem of heat propagation to be broken down into manageable segment-level calculations while still capturing the thermal interactions between neighboring regions.
Solution Approach 2:
Different weight factors are assigned to conductors based on their spatial relationship to the segment being analyzed. Conductors closer to the segment boundary receive different weights than those closer to the center, reflecting the local variation in heat contribution. This local quality approach improves accuracy without requiring a complete redesign of the calculation framework.
2Reliability
If self-heating effects are ignored in advanced process technologies, then the design process is simpler, but device reliability deteriorates
Solution Approach 1:
Temperature estimation including self-heating effects is performed during the design stage rather than waiting for post-manufacturing testing. By calculating temperature increases due to self-heating effects in advance, designers can identify and address potential reliability issues before devices are manufactured, preventing failures rather than detecting them later.
Solution Approach 2:
The method uses the existing circuit design information and conductor geometry data to perform self-heating calculations without requiring external thermal testing or measurement equipment. The design itself provides the necessary input data, and the calculation process leverages the circuit's own structural information to assess its thermal behavior and reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Provides more accurate temperature estimates by incorporating the heat contribution from neighboring polysilicon fingers, leading to improved performance and reliability of semiconductor devices by addressing self-heating effects.
Implementation Method 1
Semiconductor devices experience temperature increases due to self-heating effects
Implementation Method 2
considering the heat propagation and distribution among polysilicon fingers within active regions
Data Source
AI summary
The present disclosure provides a method for evaluating temperature information of an integrated circuit. The method includes the following steps: identifying an active region in an integrated circuit design layout; dividing the active region into a plurality of segments, wherein each segment comprises a plurality of conductors formed thereon; determining a weight of each conductor with respect to each segment; calculating a self-heat temperature increase of each conductor; and calculating a temperature increase of each segment using the weight and the self-heat temperature increase of each conductor within a valid heat-effective region of each segment.