Integrated Electronic Device Low Voltage Booster Circuit
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Solution Overview
Problem
Flash memory devices face challenges in operating with low supply voltages, such as 0.9V, due to conflicting requirements for high voltage transistors and voltage stability, leading to inefficiencies and increased component complexity.
Innovation Solution
An integrated electronic device with a 'system in package' configuration, utilizing a layered structure with a booster connected to the memory core, allowing a 0.9V supply voltage while maintaining compatibility with existing memory devices by providing a 1.8V voltage to the core through discrete components and capacitive and inductive components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If low supply voltage (0.9V) is used to increase battery operation duration, then energy efficiency is improved, but transistor performance and voltage stability deteriorate
Solution Approach 1:
The power supply system is segmented into two distinct voltage domains: a low voltage domain (0.9V) for the memory core to maximize energy efficiency, and a high voltage domain (1.8V) for the decoder circuits to ensure adequate transistor performance. This segmentation allows each subsystem to operate at its optimal voltage level without compromise.
Solution Approach 2:
A voltage conversion mechanism acts as an intermediary between the low voltage supply and the high voltage-requiring decoder circuits. This intermediary converts the 0.9V supply voltage to 1.8V locally at the decoder, enabling the decoder to operate at higher voltage while the overall system maintains low voltage operation for energy efficiency.
2Productivity
If high voltage transistors are used in decoder circuits to enable Flash memory operations, then transistor performance is improved, but device complexity increases
Solution Approach 1:
High voltage transistors are deployed selectively only in the decoder circuits where they are needed for Flash memory operations, while the rest of the memory core uses standard low voltage transistors. This localized approach to high voltage transistor usage maintains productivity where required without unnecessarily increasing overall device complexity.
Solution Approach 2:
The system dynamically switches between voltage domains based on operational requirements. The decoder circuits can operate at 1.8V when high performance is needed for reading/writing operations, while the memory core operates continuously at 0.9V. This dynamic voltage scaling allows the system to optimize transistor performance only when and where necessary.
3Reliability
If voltage conversion components are added to maintain voltage stability, then voltage stability is improved, but device complexity increases
Solution Approach 1:
Voltage conversion is performed in advance within the decoder circuitry itself, converting the 0.9V supply to 1.8V before it reaches the voltage-sensitive components. This preliminary voltage conversion ensures that all downstream components receive stable, appropriately-voltageed power without requiring additional voltage regulation stages throughout the system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient operation with low supply voltage, maintaining compatibility with existing memory devices and reducing thickness, thereby increasing operation time and simplifying power control, while addressing inefficiencies and component complexity issues.
Implementation Method 1
providing a 1.8V voltage to the core through discrete components and capacitive and inductive components
Implementation Method 2
providing a 1.8V voltage to the core through discrete components and capacitive and inductive components
Data Source
AI summary
An integrated electronic device includes at least one supply pin and at least one booster coupled to said at least one supply pin. Moreover, there is at least one integrated circuit powered by the at least one booster and associated therewith in a “system in a package configuration.”


