Integrated N-Type LED Structure for High-Resolution Display Efficiency
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Solution Overview
Problem
The challenge is to miniaturize light emitting elements for high-performance display devices while improving light emission efficiency and reducing process risks during manufacturing.
Innovation Solution
The solution involves a display device with light emitting elements comprising N-type and P-type semiconductor layers and an active layer, where the N-type semiconductor layers are integral and form a plane surface, and a thermal cleaning process is used to prepare the substrate, with specific temperature ranges and gas environments to enhance efficiency and reduce process costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the size of the light emitting element is miniaturized to achieve high resolution, then the resolution is improved, but the light emission efficiency deteriorates
Solution Approach 1:
The patent applies local quality by creating a convex portion in the N-type semiconductor layer specifically at the light emission region. This localized structural modification concentrates the light emission in a specific area, improving both resolution through precise light positioning and efficiency by optimizing the light emission characteristics at that local region.
2Use of energy by moving object
If new light emitting element structures are implemented to improve light emission efficiency, then the light emission efficiency is improved, but the process risk increases
Solution Approach 1:
The patent employs preliminary action by forming the convex portion in the N-type semiconductor layer before depositing the active layer and other subsequent layers. This advance preparation ensures proper light emission characteristics are established early in the manufacturing process, reducing the risk of process failures and ensuring consistent quality without requiring complex post-processing steps.
3Adaptability or versatility
If multiple separate N-type semiconductor layers are used for different light emitting elements, then the manufacturing flexibility is improved, but the device complexity increases
Solution Approach 1:
The patent merges multiple N-type semiconductor layers into a single integrated N-type semiconductor layer with a convex portion that serves multiple light emitting elements. This consolidation reduces device complexity by eliminating the need for multiple separate layers while maintaining manufacturing flexibility, as the convex portion can be configured to support different light emitting element designs and arrangements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves light emission efficiency and reduces process risks, leading to more efficient manufacturing and higher performance display devices with improved light emitting elements.
Implementation Method 1
performing a thermal cleaning process on the N-type semiconductor layer; the performing of the thermal cleaning process includes: increasing a process temperature at which the thermal cleaning process is performed to a target temperature range; and cleaning the N-type semiconductor layer exposed by the mask within the target temperature range
Data Source
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AI summary
The present application relates to a display device and a method for manufacturing the same. The display device includes: a base layer; and light emitting elements disposed on the base layer, the light emitting elements including an N-type semiconductor layer, a P-type semiconductor layer, and an active layer disposed between the N-type and P-type semiconductor layers. The light emitting elements include a first light emitting element emitting light of a first color and a second light emitting element emitting light of a second color. The N-type semiconductor layer includes a first N-type semiconductor layer of the first light emitting element and a second N-type semiconductor layer of the second light emitting element. The active layer includes a first active layer of the first light emitting element and a second active layer of the second light emitting element. The first and second N-type semiconductor layers are integral with each other, and form a plane surface in an area where the active layer is disposed.