Integrated MRSD with Permalloy Sensor on Planarized Semiconductor
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Solution Overview
Problem
Existing magneto-resistive sensing devices (MRSDs) require separate components for semiconductor devices and sensors, leading to increased power consumption and potential iron contamination in semiconductor fabrication facilities.
Innovation Solution
Integration of a magneto-resistive sensor directly above the underlying semiconductor circuitry, using a Nickel-Iron alloy (Peralloy) with dielectric layers to isolate iron and separate processing facilities for iron-free semiconductor fabrication and magneto-resistive material deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If magneto-resistive sensor and semiconductor device are made as separate components, then iron contamination in semiconductor fabrication can be avoided, but device size increases and power consumption increases
Solution Approach 1:
The patent combines the magneto-resistive sensor and semiconductor device into a single integrated structure where the sensor is formed directly above the semiconductor device on the same substrate. This merging eliminates the need for separate components and their associated packaging, reducing overall device size while maintaining the ability to prevent iron contamination through separate processing facilities.
Solution Approach 2:
The patent segments the manufacturing process into two distinct facilities: an iron-free semiconductor fabrication facility that produces the semiconductor device, and a separate magneto-resistive material deposition facility that adds the sensor layer. This segmentation allows each facility to be optimized for its specific requirements, preventing iron contamination while achieving integration.
2Ease of manufacture
If magneto-resistive sensor and semiconductor device are made as separate components, then manufacturing processes can be optimized separately, but power consumption increases
Solution Approach 1:
By integrating the magneto-resistive sensor directly with the semiconductor device on the same substrate, the patent enables shared power supply infrastructure and reduced signal transmission distances. This merging reduces parasitic losses and power consumption compared to separate components requiring external connections and packaging.
Solution Approach 2:
The patent segments the manufacturing into separate facilities for semiconductor fabrication and magneto-resistive material deposition, allowing each process to be independently optimized. This segmentation enables the use of specialized processes such as atomic layer deposition for the magneto-resistive layer, achieving both process optimization and reduced power consumption in the final integrated device.
3Device complexity
If magneto-resistive material is deposited in the same facility as semiconductor fabrication, then manufacturing is simplified, but iron contamination occurs
Solution Approach 1:
The patent divides the manufacturing process into two separate facilities: an iron-free semiconductor fabrication facility and a separate magneto-resistive material deposition facility. This segmentation physically isolates the iron-containing deposition processes from the sensitive semiconductor fabrication, preventing iron contamination while maintaining manufacturing efficiency through specialized process optimization in each facility.
4Adaptability or versatility
If separate components are used for sensor and semiconductor device, then manufacturing flexibility is maintained, but circuit real estate is wasted
Solution Approach 1:
The patent merges the magneto-resistive sensor and semiconductor device into a single integrated structure where the sensor is formed directly above the semiconductor device. This vertical integration utilizes the space above the existing circuitry, effectively doubling the use of circuit real estate without increasing the device footprint, while maintaining manufacturing flexibility through separate process optimization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This integration reduces power consumption and prevents iron contamination, allowing for more efficient use of circuit real estate and longer battery life in portable devices while maintaining sensor accuracy.
Implementation Method 1
Magneto-Resistive Sensing Devices (MRSDs) are used to detect the presence of a magnetic field
Implementation Method 2
The magneto-resistive material resides directly above the underlying circuitry. These dielectric layers may permit the Fe, which may be considered a contaminant for semiconductor processing, to be isolated from the underlying circuitry by these dielectric layers
Data Source
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AI summary
Apparatus and associated methods may relate to Magneto-Resistive Sensing Devices (MRSDs). In accordance with an exemplary embodiment, an MRSD comprises an underlying semiconductor device and a magneto-resistive sensor. In some exemplary embodiments, the semiconductor device is processed through most of a standard process flow. After the standard process flow, in various embodiments, a planarization step may be performed to create a more planar top surface. In some embodiments, the magneto-resistive material, which may be made from a Nickel-Iron alloy, called Permalloy, is deposited on the planar surface. A layer of interconnect metallization also may reside in this top region. The magneto-resistive material may contact the topmost layer of metallization of the semiconductor device via contact openings in the planarized surface. In some embodiments, the magneto-resistive material may similarly contact the topmost layer of metallization through these contact openings. The magneto-resistive material resides directly above the underlying circuitry.