Integrated RC Snubber Structure for Compact Semiconductor Layouts
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Solution Overview
Problem
The integration of RC snubbers with semiconductor devices poses a challenge due to increased device surface area and process costs, as they require additional chip space and separate manufacturing processes, which hinders miniaturization efforts.
Innovation Solution
A semiconductor structure and manufacturing method that integrates the RC snubber components within the electrode structure formation, allowing for simultaneous processing and reducing the total device surface area and process costs by forming the RC snubber in the same step as the electrode structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If RC snubber components are placed externally on the PCB adjacent to the switching device, then the switching device can be protected from voltage transients and EMI, but the total device surface area increases and process cost increases
Solution Approach 1:
The patent merges the RC snubber components (resistor and capacitor) with the semiconductor device by forming them in the same chip structure. The capacitor is formed using a dielectric layer and conductive plates integrated into the semiconductor substrate, while the resistor is formed as a doped region within the semiconductor material. This integration eliminates the need for separate external components on the PCB, thereby reducing the total device surface area while maintaining the protective function against voltage transients and EMI.
2Reliability
If RC snubber components are placed externally on the PCB adjacent to the switching device, then the switching device can be protected from voltage transients and EMI, but the process cost increases due to additional manufacturing steps
Solution Approach 1:
The patent combines the manufacturing processes for the RC snubber components with the standard semiconductor fabrication process. The capacitor is formed using dielectric deposition and conductive plate formation steps that are already part of the semiconductor manufacturing flow. The resistor is formed through doping processes that are integral to semiconductor device fabrication. This integration eliminates separate manufacturing steps for external components, thereby reducing process cost while maintaining reliable protection against voltage transients and EMI.
3Reliability
If RC snubber components are placed externally on the PCB adjacent to the switching device, then the switching device can be protected from voltage transients and EMI, but device miniaturization is hindered
Solution Approach 1:
The patent integrates the RC snubber components directly into the semiconductor device structure, forming them within the same chip footprint. The capacitor uses dielectric layers and conductive plates formed during standard semiconductor processing, while the resistor is created as a doped region within the semiconductor substrate. This integration enables device miniaturization by eliminating the need for separate external snubber components, allowing the protected switching device to be smaller while maintaining reliability against voltage transients and EMI.
Data Source
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AI summary
A semiconductor structure includes a substrate including a first surface (12A) and a second surface (12B) opposite to each other, and a unit region (R1) and a terminal region (R2) adjacent to each other. An electrode structure (50) in the substrate extends from the first surface toward the second surface in the unit region. A trench structure (60) in the substrate extends from the first surface toward the second surface in the unit region and adjoins the terminal region. The trench structure includes a semiconductor material layer (162) extending to the first surface. A capacitive structure on the first surface of the substrate in the terminal region adjoins the trench structure. The capacitive structure has a material the same as the semiconductor material layer, and has a capacitive electrode (163) connected to the semiconductor material layer. A method for manufacturing the semiconductor structure is also provided.