Integrated RTD-Schottky Diode Band Alignment
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Solution Overview
Problem
Current semiconductor devices require separate manufacturing of RTDs and Schottky diodes for their distinct functions, leading to increased costs and complexity in circuit manufacturing, as they need to utilize both negative resistance and rectifying properties.
Innovation Solution
A semiconductor apparatus is designed with a single diode structure that incorporates both negative resistance and rectifying functions by carefully doping and layering semiconductor materials, such as n+-InGaAs, p+-GaAsSb, and i-InAlAs, to enable interband quantum tunneling and resonant tunneling, respectively, thereby eliminating the need for separate diode types.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If separate RTD and Schottky diode structures are used to provide both negative resistance and rectifying functions, then both functions can be achieved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent merges the RTD and Schottky diode structures into a single integrated semiconductor device. The multi-layer semiconductor structure combines the negative resistance function (from the RTD portion with undoped semiconductor layers) and the rectifying function (from the Schottky diode portion with doped semiconductor layers) into one unified device, eliminating the need for separate components and reducing overall device complexity
Solution Approach 2:
The single semiconductor apparatus is designed to perform multiple functions simultaneously - it provides both the negative resistance characteristic needed for oscillation and the rectifying characteristic needed for signal mixing, making it a universal component that replaces multiple specialized components
2Reliability
If separate RTD and Schottky diode manufacturing processes are used, then each diode can be optimized for its specific function, but manufacturing cost and process complexity increase
Solution Approach 1:
The manufacturing process merges the fabrication steps for both diode types into a single integrated process. The multi-layer structure is formed in one continuous manufacturing sequence, where semiconductor layers with different doping configurations are deposited and processed together, reducing the total number of manufacturing steps and associated costs
3Ease of manufacture
If a single diode structure is used to provide both negative resistance and rectifying functions, then manufacturing complexity is reduced, but achieving both functions in one structure becomes more difficult
Solution Approach 1:
The single semiconductor apparatus is segmented into distinct functional regions - an RTD portion with undoped semiconductor layers for negative resistance and a Schottky diode portion with doped semiconductor layers for rectifying function. This segmentation allows each region to be optimized for its specific function while being manufactured as an integrated structure
Solution Approach 2:
Different regions of the semiconductor structure have different doping configurations tailored to their specific functions - the RTD region uses undoped layers for quantum tunneling effects, while the Schottky diode region uses heavily doped layers for rectifying behavior, achieving local optimization within the unified structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process and reduces costs by integrating both functions into a single diode, allowing for the creation of circuits with reduced complexity and lower production expenses.
Implementation Method 1
An Esaki diode utilizes the interband quantum tunneling, and is formed of, for example, a pn junction of p+-InGaAs 511 and n+-InGaAs 512
Implementation Method 2
An RTD is formed, as illustrated in FIG. 2A, for example, such that i-InAlAs 523, i-InGaAs 524, and i-InAlAs 525, which are not doped with impurities, are formed between two compounds, n-InGaAs 521 and 522
Data Source
AI summary
A semiconductor apparatus includes: a semiconductor apparatus includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a third semiconductor layer of the first conductivity type, wherein: the second semiconductor layer is formed between the first and third semiconductor layers, and the first and second semiconductor layers are in contact with each other; and a first energy level at a bottom edge of a conduction band of the first semiconductor layer is lower than a second energy level at a top edge of a valence band of the second semiconductor layer, and the second energy level at the top edge of the valence band of the second semiconductor layer is substantially the same as a third energy level at a bottom edge of a conduction band of the third semiconductor layer.