Integrated Semiconductor Processing Vacuum Transfer
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor processing systems face challenges in maintaining cleanliness and dimensional accuracy due to the need for substrate transfer between different processing systems, leading to contamination and particle exposure, which affects the quality of nanometer-scale features in VLSI and ULSI devices.
Innovation Solution
A method and system for integrated semiconductor processing that allows for selective etching, trimming, and epitaxial growth of cladding layers within a closed environment, avoiding exposure to atmospheric conditions by using a transfer apparatus that maintains a low-pressure or vacuum environment, thereby eliminating the need for intermediate cleaning processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If substrates are transferred between different processing systems, then various semiconductor manufacturing processes can be performed, but substrates are exposed to contamination and particles
Solution Approach 1:
The patent combines multiple processing chambers (etching chamber, trimming chamber, epitaxial growth chamber) into a single integrated processing system that maintains a continuous vacuum environment. This merging eliminates the need to transfer substrates between separate processing systems, thereby preventing exposure to atmospheric contamination while maintaining full processing capability.
Solution Approach 2:
The patent maintains a continuous vacuum environment throughout the entire processing sequence across all chambers. By using vacuum as an inert atmosphere, the system prevents substrate exposure to atmospheric contaminants during transfers, while still enabling all necessary semiconductor manufacturing processes to be performed.
2Adaptability or versatility
If substrates are transferred between processing chambers, then different processing steps can be completed, but processing time increases due to transfer and cleaning requirements
Solution Approach 1:
The patent merges multiple processing chambers into a single vacuum system, allowing substrates to be processed through etching, trimming, and epitaxial growth without breaking vacuum or requiring transfers. This eliminates transfer time and associated cleaning operations, significantly reducing total processing time while completing all necessary process steps.
Solution Approach 2:
The patent maintains continuous vacuum conditions throughout the entire processing sequence, allowing substrates to move continuously through different processing chambers without interruption. This continuity eliminates the need for vacuum breaks, transfers, and cleaning operations, maximizing productive processing time.
3Ease of manufacture
If conventional processing systems are used, then substrates can be processed in multiple chambers, but intermediate cleaning processes are required
Solution Approach 1:
The patent combines multiple processing chambers (etching, trimming, epitaxial growth) into a single integrated vacuum system. This merging maintains processing flexibility for performing different semiconductor manufacturing steps while eliminating the need for intermediate cleaning processes that would otherwise be required between transfers in conventional systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces processing time and improves the reliability and performance of semiconductor devices by minimizing exposure to contaminants, resulting in enhanced threshold voltage, drive current, and reliability of FETs like hGAA FETs.
Implementation Method 1
using a transfer apparatus that maintains a low-pressure or vacuum environment
Implementation Method 2
A first material is selectively etched in a first processing chamber of a processing system
Implementation Method 3
A cladding layer is epitaxially grown on respective layers of the trimmed second material in the second processing chamber
Data Source
AI summary
Generally, examples described herein relate to integrated solutions for forming cladding layers on trimmed layers that were formed as part of a superlattice. In an example, a first material is selectively etched in a first processing chamber of a processing system. The first material is disposed within alternating layers of the first material and a second material in a channel region on a substrate. A portion of the second material is trimmed in the first processing chamber of the processing system. The substrate is transferred from the first processing chamber of the processing system to a second processing chamber of the processing system without exposing the substrate to an ambient environment exterior to the processing system. A cladding layer is epitaxially grown on respective layers of the trimmed second material in the second processing chamber of the processing system.