Interconnect Dielectric Liner Layout for Lower RC Delay
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Solution Overview
Problem
The complexity and deficiencies in the manufacturing and integration of semiconductor devices lead to challenges in improving performance and reliability, particularly due to capacitive coupling and RC delay between adjacent interconnect structures.
Innovation Solution
A semiconductor device structure is designed with dielectric liner portions and air gaps or filling portions surrounded by dielectric liner portions, which reduce capacitive coupling and decrease RC delay by varying the widths and materials of these features.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional manufacturing processes are used for semiconductor device integration, then manufacturing complexity increases, but device performance and reliability deteriorate due to capacitive coupling and RC delay
Solution Approach 1:
The patent segments the interconnect structure by introducing dielectric liner portions that divide the continuous dielectric material into distinct sections. This segmentation creates air gaps or voids between adjacent interconnect structures, effectively reducing capacitive coupling without requiring complete redesign of the manufacturing process flow.
Solution Approach 2:
The dielectric liner portions act as intermediary elements between adjacent interconnect structures. These liners are formed by depositing a different dielectric material that remains after selective removal of the primary dielectric material, creating a mediating structure that reduces RC delay and capacitive coupling while maintaining manufacturing feasibility.
2Reliability
If dielectric liner portions with air gaps are introduced to reduce capacitive coupling, then RC delay decreases, but manufacturing process complexity increases
Solution Approach 1:
The dielectric liner material is deposited preliminarily over the entire surface before selective removal of the primary dielectric material. This preliminary action ensures that the liner portions are already in place to define the air gap regions, simplifying subsequent processing steps while achieving the desired RC delay reduction.
Solution Approach 2:
The patent changes the material parameter of the dielectric layer by introducing a dielectric liner with different etch selectivity or removal characteristics. This parameter change allows selective removal of the primary dielectric material while preserving the liner portions, creating air gaps without significantly complicating the manufacturing process.
Data Source
AI summary
A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a first interconnect structure and a second interconnect structure disposed over the second dielectric layer. The semiconductor device structure further includes a first dielectric liner portion disposed adjacent to the first interconnect structure. An air gap is enclosed in the first dielectric liner portion. In addition, the semiconductor device structure includes a second dielectric liner portion disposed adjacent to the second interconnect structure, and a filling portion surrounded by the second dielectric liner portion.