Interconnect Surface Passivation Using Cross-Linkable SAM Layers

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Solution Overview

Problem

Current self-assembled monolayers (SAMs) for surface modification in integrated circuits face limitations due to limited solubility and volatility, leading to lengthy passivation times and instability at high temperatures, which restrict their use in advanced interconnect structures.

Innovation Solution

Development of families of SAMs with enhanced solubility and volatility, featuring single, dual, or multiple functionalities and branching units, allowing for reliable passivation in solution dip, spin-on, or vapor phase processes, and incorporating functional groups for cross-linking and polymerization, enabling efficient surface modification of interconnect structures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If current self-assembled monolayers (SAMs) are used for surface modification, then passivation function is achieved, but solubility is limited and processing time becomes lengthy

Engineering Contradiction:
Improvepassivation functionVSAvoidprocessing time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent modifies the chemical structure of SAM molecules by introducing ester groups and adjusting chain lengths to optimize solubility parameters. This allows the passivation layer to be deposited more quickly from solution while maintaining the desired passivation function, directly resolving the contradiction between reliability and processing time.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention uses composite molecular structures combining hydrophobic chains with functional head groups and ester linkages. This composite approach enhances both solubility in common solvents and the effectiveness of passivation, enabling faster processing without sacrificing the protective function.

Inventive Principle:
Principle #40Composite materials

2Reliability

If current self-assembled monolayers (SAMs) are used for surface modification, then passivation function is achieved, but volatility is poor and processing complexity increases

Engineering Contradiction:
Improvepassivation functionVSAvoidprocessing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

By modifying molecular weight and volatility parameters through structural design (ester groups, chain length control), the patent enables deposition from vapor phase at practical temperatures. This simplifies processing equipment requirements and eliminates the need for lengthy soaking procedures, reducing overall processing complexity while maintaining passivation effectiveness.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If current self-assembled monolayers (SAMs) are used for surface modification, then initial passivation is achieved, but stability at high temperature deteriorates

Engineering Contradiction:
Improveinitial passivationVSAvoidhigh temperature stability
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

The patent incorporates cross-linkable functional groups in the SAM molecules that form a network structure during or after deposition. This preliminary structural preparation creates thermal stability before the device operates, preventing decomposition at high temperatures while maintaining the initial passivation function.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The invention creates a composite structure where individual SAM molecules are linked through cross-linking reactions, forming a robust network. This composite architecture provides both the initial passivation properties of the monolayer and the thermal stability of a cross-linked polymer network.

Inventive Principle:
Principle #40Composite materials

4Manufacturing precision

If traditional lithographic process is used, then pattern formation is achieved, but feature size scaling becomes difficult

Engineering Contradiction:
Improvepattern formationVSAvoidfeature size scaling
Core Design Contradiction:
Manufacturing precisionVSAdaptability or versatility

Solution Approach 1:

The patent replaces the mechanical lithographic patterning process with a chemical self-assembly approach. The SAM molecules spontaneously organize into patterns based on their molecular structure and interactions, enabling precise feature formation at scales below the diffraction limit of optical lithography, thus achieving better scalability.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The SAM molecules perform self-patterning through their inherent chemical properties and self-assembly behavior, eliminating the need for complex lithographic equipment and multiple processing steps. This self-service capability enables direct formation of scaled features through chemical modification alone.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The enhanced SAMs provide efficient and practical passivation solutions for interconnect structures, improving processing times and stability across a broader temperature range, making them more versatile for surface modification in integrated circuits.

Implementation Method 1

A surface of a layer of the one or more layers includes a first portion of the surface having a first material, and a second portion of the surface having a second material. A segment of a passivant layer is attached to the first portion of the surface. The passivant layer includes a self-assembled monolayers (SAM).

Methodology Applied
Scientific EffectSelf-assembly: Self-Assembly

Implementation Method 2

The SAM includes head groups selectively bounded to the first portion of the surface, and chains attached to the head groups

Methodology Applied
Scientific EffectChemical bonding: Chemical Bonding

Data Source

PatentUS12036578B1Interconnect structure surface modifications by passivating agents
Publication Date: 2024.07.16 INTEL CORP
  • US12036578B1 patent drawing
  • US12036578B1 patent drawing
  • US12036578B1 patent drawing

AI summary

Embodiments herein describe techniques for a semiconductor device including an interconnect structure. The interconnect structure may have a segment of a passivant layer including a SAM. The SAM may include head groups, and chains attached to the head groups. The chains include functional groups that are cross-linkable at end or side of the chains to result in chain extension by reacting with another SAM or polymer, densification by crosslinking with an adjacent SAM, or polymerization having an initiator as the SAM or the SAM attached to another SAM. Other embodiments may be described and/or claimed.