Interconnected Vertical Diode Group for ESD Protection
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Solution Overview
Problem
Semiconductor devices face challenges in preventing damage from electrostatic discharge (ESD) due to the concentration of surge currents in vertical nanowire (VNW) ESD protection diodes, as existing methods do not effectively suppress current concentration, potentially damaging the VNWs.
Innovation Solution
The semiconductor device incorporates a configuration of vertically projecting semiconductor nanowires with a diode group and a conductive layer, where the nanowires are connected in a matrix arrangement with contact plugs to distribute the surge current, reducing concentration and minimizing damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If a single VNW is used as the ESD protection diode, then the occupied area is reduced, but the VNW is damaged by surge current concentration
Solution Approach 1:
The ESD protection diode is segmented into multiple VNWs (first through fourth vertical nanowires) arranged in a matrix pattern. This segmentation distributes the surge current across multiple individual VNWs, preventing current concentration in any single VNW while maintaining compact area occupancy. Each VNW handles a portion of the total surge current, improving reliability without significantly increasing the overall device area.
Solution Approach 2:
Multiple VNWs are merged into a single ESD protection diode structure through shared contact plugs and conductive layers. The first and second VNWs share a common first contact plug, while the third and fourth VNWs share a common second contact plug. This merging allows the VNWs to function collectively as one protection device, distributing current while maintaining a compact footprint.
2Reliability
If multiple VNWs are used to distribute surge current, then current concentration is suppressed, but the device complexity increases
Solution Approach 1:
Multiple VNWs are merged into a single ESD protection diode structure through shared contact plugs and conductive layers. The first and second VNWs share a common first contact plug, while the third and fourth VNWs share a common second contact plug. This merging allows the VNWs to function collectively as one protection device, distributing current while maintaining a compact footprint.
Solution Approach 2:
The matrix arrangement of VNWs with shared contact plugs provides multi-functionality: individual VNWs can handle surge currents independently, while the shared contact plugs provide common electrical connections. This universal structure allows the same configuration to serve both current distribution and area optimization functions simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses current concentration in VNW ESD protection diodes, preventing damage and enhancing the reliability of semiconductor devices during ESD events.
Implementation Method 1
a first conductive layer that is formed above the first diode group and is electrically connected to upper ends of a plurality of the first projections in common
Data Source
AI summary
An ESD protection diode in a semiconductor device includes: a semiconductor substrate; a diode group that has a plurality of grouped VNW diodes, each of the VNW diodes having a VNW having a lower end and an upper end, that are formed on the semiconductor substrate and have a semiconductor material; and a top plate that is formed above the diode group and is a conductive layer electrically connected to the upper ends of the VNWs of the respective VNW diodes, and there is fabricated the semiconductor device that is capable of, even when large current flows through the VNW diode, suppressing current concentration and preventing damage of the VNW diode.