Interconnecting Substrate Warpage Control via Sunken Insulating Film
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional interconnecting substrates face issues with warpage and mechanical strength, particularly in high-density designs, leading to reduced transfer efficiency and mounting reliability during semiconductor chip packaging.
Innovation Solution
The interconnecting substrate incorporates a base insulating film with a sunken section, a first interconnection pattern, and a warpage-controlling pattern to suppress warpage, featuring a specific component ratio and pattern design that balances mechanical strength and warpage control, utilizing materials like heat-resistant resins and fiber-reinforced composites.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a glass epoxy printed substrate is used as the base core substrate, then the substrate can be easily manufactured, but deformation such as shrinkage and warpage occurs due to heating during multilayer formation and semiconductor chip carrying
Solution Approach 1:
The patent uses a metal sheet (such as stainless steel, aluminum, or copper) as the base substrate instead of glass epoxy, providing superior heat resistance and dimensional stability. The metal sheet is combined with insulating layers and interconnection structures to create a composite packaging substrate that maintains structural integrity during heating processes while remaining manufacturable through established techniques like sputtering, plating, and lamination.
2Ease of manufacture
If external electrode terminals are formed by etching metal sheet, then the manufacturing process is simple, but the pitch between terminals cannot be narrowed due to side etching control limits
Solution Approach 1:
The patent replaces the traditional etching process with a deposition-based approach. Conductive layers are deposited through sputtering or plating to form external electrode terminals, allowing precise control of terminal dimensions and pitch without the side etching problems that limit conventional etching methods. This enables finer pitch terminals while maintaining manufacturing feasibility.
3Temperature
If the base substrate is made of metal sheet, then heat resistance is improved, but stresses concentrate at the interface between external electrode terminal and insulating layer, causing open faults
Solution Approach 1:
The patent modifies the structural parameters at the interface between external electrode terminals and insulating layers. This includes optimizing the thickness and material composition of intermediate adhesive layers, controlling the geometry of terminal embeddings, and adjusting curing parameters of insulating materials to distribute thermal and mechanical stresses uniformly, preventing stress concentration that leads to open faults while maintaining high heat resistance.
4Productivity
If high density and fine pitch design is implemented, then device performance is improved, but warpage and waviness increase due to thermal stress during processing
Solution Approach 1:
The patent employs a composite structure consisting of a metal base substrate with carefully selected insulating and conductive layers. The metal substrate provides thermal stability, while the layered composite structure is designed with matching thermal expansion coefficients and optimized thickness ratios to minimize differential thermal stresses during high-density interconnection formation, thereby preventing warpage and maintaining substrate flatness.
Data Source
AI summary
An interconnecting substrate is provided with a base insulating film having a sunken section in a bottom surface thereof, a first interconnection provided in the sunken section, a via hole formed in the base insulating film, and a second interconnection which is connected to the first interconnection via a conductor within the via hole and is formed on a top surface of the base insulating film, wherein the interconnecting substrate includes a first interconnection pattern formed of the first interconnection which includes at least a linear pattern which extends along a second direction orthogonal to a first direction, and a warpage-controlling pattern which is provided in the sunken section in the bottom surface of the base insulating film and is formed in such a manner as to suppress a warpage of the interconnecting substrate toward a bottom side on both sides of the first direction.