Semiconductor/Solid-State Device Details TRIZ Cases

A laminate-based package uses an internal overmold and perimeter wall to encapsulate electronic components for reliable signal transmission.

A sealed electronic device package uses a stacked sealing layer and low-melting-point material to form a robust bonding structure.

Rear side contacts merge electrical paths within vertical semiconductor chips, reducing inductivity and electromagnetic stray radiation.

A naphthalene ring-containing epoxy resin composition balances flowability and low coefficient of linear expansion.

A metal seal ring interrupts the moisture path between interlayer insulating films, preventing negative bias temperature instability in PMOS transistors.

A semiconductor chip package structure enables efficient 3D stacking of memory dies with different sizes.

Thermally conductive substrate portions conduct heat from logic to memory packages, resolving air gap thermal resistance in POP stacks.

Variable width outer leads overlay glass edges to prevent bending fractures while maintaining bonding flexibility.

Polymer layer fills gaps between copper pads to eliminate voids and ensure reliable wafer bonding.

Structured auxiliary layer edges guide resin expansion to protect bond wires, preventing coverage of sensitive sensing areas.

Redistribution circuit layer reconfigures pads on the second side of a light emitting module to reduce short circuit risk and improve bonding quality.

Inkjet-printed solder columns reflow within laser-ablated openings to form tall interconnects that meet height targets without bridging.

A resistive thin film uses a nickel concentration gradient to match electrode work functions.

A ball forming device uses dual current control circuits to stabilize discharge voltage and current for consistent wire bonding.

Bonding a foil substrate with flip chips to a reinforcement layer eliminates separate module insertion steps, reducing manufacturing costs and complexity.

A sunken base insulating film houses a warpage-controlling pattern to suppress substrate deformation, improving mounting reliability and thermal stability.

Laser irradiation through resin grooves separates semiconductor packages, eliminating sharp edges and reducing mechanical blade wear.

Rigid filler particles in the encapsulant resist warpage and maintain planarity during vertical stacking.

A microwave device uses a conductive film connected to ground via holes for efficient heat dissipation.

Forming alignment marks on underfill resin surfaces enables stable position alignment of stacked electronic components.

Segmented inner and outer seal rings isolate analog and RF circuit blocks from digital noise coupling while maintaining environmental protection reliability.

Selective deposition of configuring substances replaces laser fuses to tune electrical properties without inducing stress-induced cracking in the wafer.

Conductive rings redirect plating current and stiffen packages for uniform copper plating.

Encapsulation nests vertical connectors to resolve the contradiction between electrical coupling reliability and horizontal packing density.

Dielectric ridges pivot bond wires to reduce Z-height and prevent shorts during overmolding.

Multi-stage conductors connect stacked chips via redistribution layers, eliminating interposer substrates to reduce signal path length and package thickness.

Patterned insulating layers on the substrate eliminate underfill requirements, resolving thermal expansion incompatibility that causes substrate cracks.

A thin semiconductor package uses die terminals, leadframe-clip coupling, and molding encapsulation to cut thickness despite damage and moisture.

A thinned semiconductor substrate bonded to an optical carrier enables high light transmittance for photodetector arrays.

A tapered connection bump expands width away from the substrate to enhance bonding force and contact stability.

Au bumps deposited on electrode pads and through vias establish electrical connections, preventing voids during electroplating.

Conformal electrode deposition on interlayer dielectric sidewalls increases capacitance density while reducing surface area requirements.

Z-shape integrated circuit leads reduce maximum solder stress by over 30 percent during thermal cycling to improve board level reliability.

A conductive shielding layer on an IPD encapsulant connects to a ground channel.

A wiring substrate manufacturing method uses sequential alkali treatments and ultrasonic cleaning to form a uniform seed layer for electrolytic plating.

Segmented connector leads resolve manufacturing versus connectivity contradictions, enabling smaller package dimensions while maintaining structural rigidity.

Vertical stacking of controller and power transistor dies on metal clips reduces parasitic inductance from long bond wires, enabling higher frequency switching.

Flash activation creates a chemically reactive low-k dielectric surface for precursor deposition.

Alternating polarity metal layers in a chip package increase load current capacity and reduce voltage differences across the device.

A wafer level chip scale packaging system uses a protective coating and separate labeling film to form integrated circuit packages.

A ferroelectric tunnel junction memory device integrates an ovonic threshold switch within the memory cell structure.

A curable resin composition combines polyfunctional epoxy compounds with active hydrogen to form cured products.

Front-side antenna placement within a PCB cavity shortens the signal path to reduce insertion loss and electromagnetic interference.

An IC wafer integrates an electromagnetic shielding layer on an insulated surface to provide signal protection.

Asymmetric chip placement shortens high-frequency bonding wires, reducing parasitic inductance and improving heat dissipation.

A wound conductive layer sits above a semiconductor die to reduce eddy current losses and enhance the Q factor.

A wafer backside interconnect structure uses a dual damascene metal line to extend electrical connections beyond through-substrate vias.

Forming a damping resistor on the package substrate reduces resonance in external capacitive networks without increasing die complexity.

Conductive vias extend through alternating dielectric and conductive layers to form vertical capacitor structures within semiconductor devices.

A two-layer insulating adhesive connects IC chip bumps to substrate electrodes using a filler-free layer for direct contact.