Interconnection Structure With Uniform-Height Conductive Features
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Solution Overview
Problem
The challenge in semiconductor manufacturing is the delamination and instability of conductive features due to varying heights and widths during the formation of interconnection structures, which are exacerbated by thermal cycling and etching processes.
Innovation Solution
The use of electrochemical deposition (ECD) processes to form conductive features with controlled widths and uniform heights, employing low current density and high acidity baths to limit surface reactions, resulting in conductive features with rounded corners and consistent heights, thereby enhancing stability and reducing delamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition processes are used to form conductive features, then manufacturing complexity is reduced, but height uniformity and stability of conductive features deteriorate due to varying heights and widths
Solution Approach 1:
The patent applies parameter changes by modifying the electrochemical deposition conditions, specifically using low current density and high acidity baths to control the deposition process. This results in conductive features with uniform heights and rounded corners, resolving the height uniformity issue while maintaining processability
Solution Approach 2:
The patent employs periodic action through multiple deposition steps with varying current densities. The process includes initial deposition at higher current density followed by refinement at lower current density, creating uniform heights through staged periodic deposition cycles
2Reliability
If electrochemical deposition with low current density and high acidity baths is used, then height uniformity and stability improve, but manufacturing process complexity increases
Solution Approach 1:
The patent changes the chemical parameters of the deposition bath by using high acidity solutions and controlling current density levels. These parameter changes produce conductive features with consistent heights and improved stability, addressing the reliability concern while the added process steps are justified by the significant improvement in feature uniformity
Solution Approach 2:
The patent replaces conventional physical vapor deposition or chemical vapor deposition methods with electrochemical deposition. This substitution enables precise control over feature height and morphology through electrical parameter control, achieving improved stability and uniformity that cannot be obtained with traditional deposition techniques
3Manufacturing precision
If conventional etching processes are used, then process simplicity is maintained, but etching inconsistencies and delamination increase due to height variations
Solution Approach 1:
The patent performs preliminary action by forming conductive features with uniform heights and rounded corners through controlled electrochemical deposition before the etching process. This preliminary height uniformity ensures that subsequent etching operations are consistent across all features, preventing delamination and improving etching precision without requiring additional etching process steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures consistent conductive feature heights, reducing delamination and etching inconsistencies, leading to improved manufacturing yield and reliability of interconnection structures.
Implementation Method 1
The use of electrochemical deposition (ECD) processes to form conductive features with controlled widths and uniform heights
Data Source
AI summary
An interconnection structure and methods of forming the same are described. The interconnection structure includes a dielectric layer, a dielectric material disposed over the dielectric layer, and first and second conductive features disposed in the dielectric material. The first and second conductive features each has rounded top corners, the first conductive feature has a first width and a first height, and the second conductive feature has a second width substantially less than the first width and a second height substantially the same as the first height. The structure further includes an etch stop layer disposed on the first and second conductive features and third and fourth conductive features disposed in the dielectric material and the etch stop layer. The third conductive feature is in contact with the first conductive feature, and the fourth conductive feature is in contact with the second conductive feature.