Internal Voltage Generating Circuit with Variable Detection Signal Swing Width
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Solution Overview
Problem
Conventional internal voltage generating circuits in semiconductor memory apparatuses can overshoot and exceed the target voltage level, leading to increased current consumption due to larger voltage increments.
Innovation Solution
An internal voltage generating circuit with a detection signal control mechanism that adjusts the swing width and voltage level based on the voltage difference between the internal voltage and the target voltage, using a comparison unit, control voltage generating unit, and driving unit to prevent overshooting by enabling or disabling control voltages accordingly.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the internal voltage generating circuit increases the internal voltage level quickly to reach the target voltage level, then the voltage rise speed is improved, but the internal voltage may exceed the target voltage level causing overshoot
Solution Approach 1:
The patent applies dynamics by making the detection signal swing width variable rather than fixed. The swing width is dynamically adjusted based on the voltage difference between internal voltage and target voltage. When the voltage difference is large, the swing width is larger to enable faster voltage rise. When the voltage difference becomes small, the swing width is reduced to prevent overshoot, thus achieving both fast response and precise control.
Solution Approach 2:
The patent changes the parameter of detection signal swing width based on the operating condition (voltage difference). By monitoring the voltage difference and adjusting the swing width parameter accordingly, the system transitions from a static control approach to a adaptive one, allowing the same detection circuit to operate effectively across different voltage conditions without exceeding the target voltage.
2Device complexity
If the internal voltage generating circuit uses a fixed swing width detection signal, then the circuit design is simple, but the internal voltage may overshoot the target level leading to increased current consumption
Solution Approach 1:
The patent dynamically changes the swing width parameter of the detection signal based on the voltage difference between internal and target voltages. This parameter adjustment prevents overshoot and the associated energy waste from excessive voltage levels, while maintaining reasonable circuit complexity through systematic design.
Solution Approach 2:
The patent implements feedback by continuously monitoring the voltage difference between internal voltage and target voltage, and using this information to adjust the detection signal swing width. This closed-loop control ensures that the internal voltage approaches the target level accurately without overshooting, thereby preventing unnecessary current consumption that would result from operating at higher than required voltage levels.
Data Source
AI summary
An internal voltage generating circuit capable of controlling a swing width of a detection signal in a semiconductor memory apparatus is provided. The internal voltage generating circuit of a semiconductor memory apparatus includes an internal voltage level detecting unit configured to compare an internal voltage with a target voltage and then generate a detection signal, and an internal voltage level control unit configured to control the internal voltage based on a voltage level of the detection signal, wherein the internal voltage level detecting unit is configured to control a swing width of the detection signal based on a voltage difference between the internal voltage and the target voltage.